CY7C1461AV33
CY7C1463AV33
CY7C1465AV33
36-Mbit (1M x 36/2 M x 18/512K x 72)
Flow-ThroughSRAMwithNoBL™Architecture
Features
Functional Description[1]
• No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33
is equipped with the advanced No Bus Latency (NoBL) logic
required to enable consecutive Read/Write operations with
data being transferred on every clock cycle. This feature
dramatically improves the throughput of data through the
SRAM, especially in systems that require frequent Write-Read
transitions.
• Supports up to 133-MHz bus operations with zero wait
states
— Data is transferred on every clock
• Pin-compatible and functionally equivalent to ZBT™
devices
• Internally self timed output buffer control to eliminate the
need to use OE
• Registered inputs for flow through operation
• Byte Write capability
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
• 3.3V/2.5V IO power supply
• Fast clock-to-output times
— 6.5 ns (for 133-MHz device)
Write operations are controlled by the two or four Byte Write
Select (BWX) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self timed write circuitry.
• Clock Enable (CEN) pin to enable clock and suspend
operation
• Synchronous self timed writes
• Asynchronous Output Enable
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
• CY7C1461AV33, CY7C1463AV33 available in
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free
and non-Pb-free 165-Ball FBGA package. CY7C1465AV33
available in Pb-free and non-Pb-free 209-Ball FBGA
package
• Three chip enables for simple depth expansion
• Automatic Power down feature available using ZZ mode or
CE deselect
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• Burst Capability — linear or interleaved burst order
• Low standby power
Selection Guide
133 MHz
6.5
100 MHz
8.5
Unit
ns
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
310
290
mA
mA
120
120
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05356 Rev. *F
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised July 09, 2007