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CY7C1465AV33-100BGXI PDF预览

CY7C1465AV33-100BGXI

更新时间: 2024-11-16 05:09:35
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
31页 1144K
描述
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL⑩ Architecture

CY7C1465AV33-100BGXI 数据手册

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CY7C1461AV33  
CY7C1463AV33  
CY7C1465AV33  
36-Mbit (1M x 36/2 M x 18/512K x 72)  
Flow-ThroughSRAMwithNoBLArchitecture  
Features  
Functional Description[1]  
• No Bus Latency™ (NoBL™) architecture eliminates dead  
cycles between write and read cycles  
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is a  
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow -through  
Burst SRAM designed specifically to support unlimited true  
back-to-back Read/Write operations without the insertion of  
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33  
is equipped with the advanced No Bus Latency (NoBL) logic  
required to enable consecutive Read/Write operations with  
data being transferred on every clock cycle. This feature  
dramatically improves the throughput of data through the  
SRAM, especially in systems that require frequent Write-Read  
transitions.  
• Supports up to 133-MHz bus operations with zero wait  
states  
— Data is transferred on every clock  
• Pin-compatible and functionally equivalent to ZBT™  
devices  
• Internally self timed output buffer control to eliminate the  
need to use OE  
• Registered inputs for flow through operation  
• Byte Write capability  
All synchronous inputs pass through input registers controlled  
by the rising edge of the clock. The clock input is qualified by  
the Clock Enable (CEN) signal, which when deasserted  
suspends operation and extends the previous clock cycle.  
Maximum access delay from the clock rise is 6.5 ns (133-MHz  
device).  
• 3.3V/2.5V IO power supply  
• Fast clock-to-output times  
— 6.5 ns (for 133-MHz device)  
Write operations are controlled by the two or four Byte Write  
Select (BWX) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self timed write circuitry.  
• Clock Enable (CEN) pin to enable clock and suspend  
operation  
• Synchronous self timed writes  
• Asynchronous Output Enable  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. To avoid bus contention,  
the output drivers are synchronously tri-stated during the data  
portion of a write sequence.  
• CY7C1461AV33, CY7C1463AV33 available in  
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free  
and non-Pb-free 165-Ball FBGA package. CY7C1465AV33  
available in Pb-free and non-Pb-free 209-Ball FBGA  
package  
• Three chip enables for simple depth expansion  
• Automatic Power down feature available using ZZ mode or  
CE deselect  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• Burst Capability — linear or interleaved burst order  
• Low standby power  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
310  
290  
mA  
mA  
120  
120  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05356 Rev. *F  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised July 09, 2007  

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