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CY7C1461AV33_11 PDF预览

CY7C1461AV33_11

更新时间: 2024-09-28 09:44:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
34页 1042K
描述
36-Mbit (1 M x 36/2 M x 18/512 k x 72) Flow-Through SRAM with NoBL Architecture

CY7C1461AV33_11 数据手册

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CY7C1461AV33  
CY7C1463AV33, CY7C1465AV33  
36-Mbit (1 M × 36/2 M × 18/512 K × 72)  
Flow-Through SRAM with NoBL™ Architecture  
36-Mbit (1  
M × 36/2 M × 18/512 K × 72) Flow-Through SRAM with NoBL™ Architecture  
Features  
Functional Description  
No Bus Latency™ (NoBL™) architecture eliminates dead  
cycles between write and read cycles  
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33[1] are  
3.3 V, 1 M × 36/2 M × 18/512 K × 72 Synchronous Flow-Through  
Burst SRAMs designed specifically to support unlimited true  
back-to-back read and write operations without the insertion of  
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is  
equipped with the advanced NoBL logic required to enable  
consecutive read and write operations with data being  
transferred on every clock cycle. This feature dramatically  
improves the throughput of data through the SRAM, especially  
in systems that require frequent write-read transitions.  
Supports up to 133 MHz bus operations with zero wait states  
Data is transferred on every clock  
Pin compatible and functionally equivalent to ZBT™ devices  
Internally self timed output buffer control to eliminate the need  
to use OE  
Registered inputs for flow through operation  
Byte write capability  
All synchronous inputs pass through input registers controlled by  
the rising edge of the clock. The clock input is qualified by the  
Clock Enable (CEN) signal, which when deasserted suspends  
operation and extends the previous clock cycle. Maximum  
access delay from the clock rise is 6.5 ns (133 MHz device).  
3.3 V and 2.5 V IO power supply  
Fast clock-to-output times  
6.5 ns (for 133 MHz device)  
Write operations are controlled by the two or four Byte Write  
Select (BWX) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self timed write circuitry.  
Clock Enable (CEN) pin to enable clock and suspend operation  
Synchronous self timed writes  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. To avoid bus contention,  
the output drivers are synchronously tri-stated during the data  
portion of a write sequence.  
Asynchronous Output Enable  
CY7C1461AV33,  
CY7C1463AV33  
available  
in  
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free and  
non Pb-free 165-ball FBGA package. CY7C1465AV33  
available in Pb-free and non-Pb-free 209-ball FBGA package  
Three chip enables for simple depth expansion  
Automatic power down feature available using ZZ mode or CE  
deselect  
IEEE 1149.1 JTAG-compatible boundary scan  
Burst capability — linear or interleaved burst order  
Low standby power  
Selection Guide  
133 MHz  
6.5  
100 MHz  
8.5  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Maximum CMOS Standby Current  
310  
290  
mA  
mA  
120  
120  
Note  
1. For best practices recommendations, refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05356 Rev. *I  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised March 29, 2011  
[+] Feedback  

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