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CY7C128A-15PC PDF预览

CY7C128A-15PC

更新时间: 2024-01-22 21:28:37
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
9页 221K
描述
2K x 8 Static RAM

CY7C128A-15PC 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOJ包装说明:SOJ, SOJ24,.34
针数:24Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.82最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-J24
JESD-609代码:e3长度:15.365 mm
内存密度:16384 bit内存集成电路类型:STANDARD SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:24
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOJ封装等效代码:SOJ24,.34
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V认证状态:Not Qualified
座面最大高度:3.55 mm最大待机电流:0.02 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.12 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:20
宽度:7.505 mm

CY7C128A-15PC 数据手册

 浏览型号CY7C128A-15PC的Datasheet PDF文件第2页浏览型号CY7C128A-15PC的Datasheet PDF文件第3页浏览型号CY7C128A-15PC的Datasheet PDF文件第4页浏览型号CY7C128A-15PC的Datasheet PDF文件第5页浏览型号CY7C128A-15PC的Datasheet PDF文件第6页浏览型号CY7C128A-15PC的Datasheet PDF文件第7页 
1CY7C128A  
CY7C128A  
2K x 8 Static RAM  
Features  
Functional Description  
The CY7C128A is a high-performance CMOS static RAM or-  
ganized as 2048 words by 8 bits. Easy memory expansion is  
provided by an active LOW chip enable (CE), and active LOW  
output enable (OE) and three-state drivers. The CY7C128A  
has an automatic power-down feature, reducing the power  
consumption by 83% when deselected.  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
• High speed  
— 15 ns  
• Low active power  
— 440 mW (commercial)  
— 550 mW (military)  
Writing to the device is accomplished when the chip enable  
(CE) and write enable (WE) inputs are both LOW.  
Data on the eight I/O pins (I/O through I/O ) is written into the  
• Low standby power  
— 110 mW  
0
7
memory location specified on the address pins (A through  
0
A
).  
10  
• TTL-compatible inputs and outputs  
• Capable of withstanding greater than 2001V electro-  
static discharge  
Reading the device is accomplished by taking chip enable  
(CE) and output enable (OE) LOW while write enable (WE) remains  
HIGH. Under these conditions, the contents of the memory location  
specified on the address pins will appear on the eight I/O pins.  
• V of 2.2V  
IH  
The I/O pins remain in high-impedance state when chip enable  
(CE) or output enable (OE) is HIGH or write enable (WE) is LOW.  
The CY7C128A utilizes a die coat to insure alpha immunity.  
Pin  
Logic Block Diagram  
Configurations  
DIP/SOJ  
Top View  
A
V
CC  
1
24  
23  
22  
7
A
A
A
A
8
A
9
2
3
4
5
6
7
8
9
6
5
4
WE  
OE  
21  
20  
19  
18  
17  
A
A
2
3
A
10  
7C128A  
A
1
CE  
I/O  
A
0
7
I/O  
I/O  
0
I/O  
6
16  
15  
14  
13  
0
INPUT BUFFER  
I/O  
I/O  
10  
11  
12  
I/O  
I/O  
5
4
1
2
I/O  
1
A
10  
GND  
I/O  
3
A
9
I/O  
2
C128A–2  
A
8
LCC  
Top View  
A
7
I/O  
3
128 x 16 x 8  
ARRAY  
A
6
I/O  
4
A
5
A
4
3
2 1 2423  
22  
I/O  
5
4
A
4
A
9
5
6
7
8
9
10  
21  
20  
19  
18  
17  
16  
A
2
WE  
OE  
3
A
CE  
WE  
I/O  
6
POWER  
DOWN  
A
A
10  
7C128A  
1
COLUMN  
DECODER  
A
0
CE  
I/O  
0
I/O  
7
I/O  
7
OE  
I/O  
1
I/O  
6
11 12 13 14 15  
A
3
A
2
A
1
A
0
C128A–3  
C128A–1  
Selection Guide  
7C128A–15 7C128A–20 7C128A–25  
7C128A–35  
7C128A–45  
Maximum Access Time (ns)  
15  
20  
25  
100  
125  
20  
35  
100  
100  
20  
45  
Commercial  
Military  
120  
100  
Maximum Operating  
Current (mA)  
125  
100  
20  
Commercial  
Military  
40/40  
40/20  
40/20  
Maximum Standby  
Current (mA)  
40  
20  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
December 1988 – Revised December 1992  

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