Datasheet > CY7C1165KV18-400BZXC

CY7C1165KV18-400BZXC

更新时间： 2024-11-08 15:19:27

品牌	Logo	应用领域
英飞凌 - INFINEON		静态存储器
页数	文件大小	规格书
30页	770K
描述
Synchronous SRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY7C1165KV18-400BZXC 数据手册

浏览型号CY7C1165KV18-400BZXC的Datasheet PDF文件第2页

浏览型号CY7C1165KV18-400BZXC的Datasheet PDF文件第3页

浏览型号CY7C1165KV18-400BZXC的Datasheet PDF文件第4页

浏览型号CY7C1165KV18-400BZXC的Datasheet PDF文件第5页

浏览型号CY7C1165KV18-400BZXC的Datasheet PDF文件第6页

浏览型号CY7C1165KV18-400BZXC的Datasheet PDF文件第7页

CY7C1161KV18/CY7C1165KV18

18-Mbit QDR^®II+ SRAM Four-Word

Burst Architecture (2.5 Cycle Read Latency)

18-Mbit QDR^®II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)

Features

Configurations

■ Separate independent read and write data ports

❐ Supports concurrent transactions

With Read Cycle Latency of 2.5 cycles:

CY7C1163KV18 – 1M × 18

■ 550-MHz clock for high bandwidth

CY7C1165KV18 – 512K × 36

■ Four-word burst for reducing address bus frequency

Functional Description

■ Double data rate (DDR) interfaces on both read and write ports

(data transferred at 1100 MHz) at 550 MHz

The CY7C1163KV18, and CY7C1165KV18 are 1.8

Synchronous Pipelined SRAMs, equipped with QDR II+

architecture. Similar to QDR II architecture, QDR II+ architecture

consists of two separate ports: the read port and the write port to

access the memory array. The read port has dedicated data

outputs to support read operations and the write port has

dedicated data inputs to support write operations. QDR II+

architecture has separate data inputs and data outputs to

completely eliminate the need to ‘turnaround’ the data bus that

exists with common I/O devices. Each port is accessed through

a common address bus. Addresses for read and write addresses

are latched on alternate rising edges of the input (K) clock.

Accesses to the QDR II+ read and write ports are completely

independent of one another. To maximize data throughput, both

read and write ports are equipped with DDR interfaces. Each

address location is associated with four 18-bit words

(CY7C1163KV18), or 36-bit words (CY7C1165KV18) that burst

sequentially into or out of the device. Because data is transferred

into and out of the device on every rising edge of both input

clocks (K and K), memory bandwidth is maximized while

simplifying system design by eliminating bus ‘turnarounds’.

■ Available in 2.5 clock cycle latency

■ Two input clocks (K and K) for precise DDR timing

❐ SRAM uses rising edges only

■ Echo clocks (CQ and CQ) simplify data capture in high speed

systems

■ Data valid pin (QVLD) to indicate valid data on the output

■ Single multiplexed address input bus latches address inputs

for read and write ports

■ Separate port selects for depth expansion

■ Synchronous internally self-timed writes

■ QDR^®II+ operates with 2.5 cycle read latency when DOFF is

asserted HIGH

■ Operates similar to QDR I device with one cycle read latency

when DOFF is asserted LOW

■ Available in × 18, and × 36 configurations

■ Full data coherency, providing most current data

Depth expansion is accomplished with port selects, which

enables each port to operate independently.

[1]

■ Core V_DD= 1.8 V± 0.1 V; I/O V_DDQ= 1.4 V to V_DD

❐ Supports both 1.5 V and 1.8 V I/O supply

All synchronous inputs pass through input registers controlled by

the K or K input clocks. All data outputs pass through output

registers controlled by the K or K input clocks. Writes are

conducted with on-chip synchronous self-timed write circuitry.

■ HSTL inputs and variable drive HSTL output buffers

■ Available in 165-ball FBGA package (13 × 15 × 1.4 mm)

■ Offered in both Pb-free and non Pb-free packages

■ JTAG 1149.1 compatible test access port

For a complete list of related documentation, click here.

■ Phase-locked loop (PLL) for accurate data placement

Selection Guide

Description

Maximum operating frequency

550 MHz

550

450 MHz

450

400 MHz Unit

400

610

850

MHz

Maximum operating current

× 18

× 36

780

670

1100

Not Offered

Note

1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V

= 1.4 V to V

DDQ

Cypress Semiconductor Corporation

Document Number: 001-58911 Rev. *I

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 3, 2018

12 3 4 5 6 7...30

中文翻译

下载PDF

与CY7C1165KV18-400BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1165KV18-550BZC	CYPRESS	获取价格	18-Mbit QDR? II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1165KV18-550BZC	INFINEON	获取价格	Synchronous SRAM
CY7C1165KV18-550BZXC	CYPRESS	获取价格	18-Mbit QDR? II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1165V18	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1165V18-300BZC	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1165V18-300BZI	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1165V18-300BZXC	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1165V18-300BZXI	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1165V18-333BZC	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu
CY7C1165V18-333BZI	CYPRESS	获取价格	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu

与CY7C1165KV18-400BZXC相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

16
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

13
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

37
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

34

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1165KV18-400BZXC

CY7C1165KV18-400BZXC 数据手册

与CY7C1165KV18-400BZXC相关器件

与CY7C1165KV18-400BZXC相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1165KV18-400BZXC

CY7C1165KV18-400BZXC 数据手册

与CY7C1165KV18-400BZXC相关器件

与CY7C1165KV18-400BZXC相关文章

您还可以找

您在本页遇到什么问题？