Datasheet > CY7C1156V18-300BZC

CY7C1156V18-300BZC

更新时间： 2024-01-08 04:41:56

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
28页	1159K
描述
18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

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CY7C1156V18-300BZC 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA, BGA165,11X15,40	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	300 MHz	I/O 类型：	SEPARATE
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	15 mm	内存密度：	18874368 bit
内存集成电路类型：	QDR SRAM	内存宽度：	9
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	2MX9	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.201 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.663 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	20	宽度：	13 mm

CY7C1156V18-300BZC 数据手册

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CY7C1141V18

CY7C1156V18

CY7C1143V18

CY7C1145V18

Document History Page

Document Title: CY7C1141V18/CY7C1156V18/CY7C1143V18/CY7C1145V18, 18-Mbit QDR™-II+ SRAM 4-Word Burst Archi-

tecture (2.0 Cycle Read Latency)

Document Number: 001-06583

Orig. of

Change

REV.

ECN No. Issue Date

Description of Change

430351

461654

See ECN

NXR

New data sheet

NXR

Revised the MPNs from

CY7C1156BV18 to CY7C1156V18

CY7C1143BV18 to CY7C1143V18

CY7C1145BV18 to CY7C1145V18

Changed t_THand t_TLfrom 40 ns to 20 ns, changed t_TMSS, t_TDIS, t_CS, t_TMSH, t_TDIH

_CHfrom 10 ns to 5 ns and changed t_TDOVfrom 20 ns to 10 ns in TAP AC

Switching Characteristics table

Modified Power Up waveform

497629

See ECN

NXR

Changed the V_DDQoperating voltage to 1.4V to V_DDin the Features section, in

Operating Range table and in the DC Electrical Characteristics table

Added foot note in page 1

Changed the Maximum rating of Ambient Temperature with Power Applied from

–10°C to +85°C to –55°C to +125°C

Changed V_REF(max) spec from 0.85V to 0.95V in the DC Electrical Character-

istics table and in the note below the table

Updated foot note 22 to specify Overshoot and Undershoot Spec

Updated Θ_JAand Θ_JCvalues

Removed x9 part and its related information

Updated footnote 25

1167806

See ECN VKN/KKVTMP Converted from preliminary to final

Added x8 and x9 parts

Changed I_DDvalues from 766 mA to 1020 mA for 375 MHz, 708 mA to 920 mA

for 333 MHz, 663 mA to 850 mA for 300 MHz

Changed I_SBvalues from 227 mA to 290 mA for 375 MHz, 212 mA to 260 mA

for 333 MHz, 201 mA to 250 mA for 300 MHz

Changed t_CYC(max)spec to 8.4 ns for all speed bins

Changed Θ_JAvalue from 13.48 °C/W to 17.2 °C/W

Updated Ordering Information table

any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for

medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as

critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems

application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),

United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,

and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress

integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without

the express written permission of Cypress.

Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES

OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not

assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where

a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer

assumes all risk of such use and in doing so indemnifies Cypress against all charges.

Use may be limited by and subject to the applicable Cypress software license agreement.

Document Number: 001-06583 Rev. *C

Revised June 15, 2007

Page 28 of 28

QDR™ is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All

product and company names mentioned in this document are the trademarks of their respective holders.

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与CY7C1156V18-300BZC相关器件

型号	品牌	描述	获取价格	数据表
CY7C1156V18-300BZI	CYPRESS	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu	获取价格
CY7C1156V18-300BZXC	CYPRESS	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu	获取价格
CY7C1156V18-300BZXI	CYPRESS	18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architectu	获取价格
CY7C1156V18-333BZC	CYPRESS	QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165	获取价格
CY7C1156V18-333BZI	CYPRESS	QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FPBGA-165	获取价格
CY7C11571KV18	CYPRESS	18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)	获取价格

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