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CY7C1143KV18 PDF预览

CY7C1143KV18

更新时间: 2024-11-20 12:22:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
29页 619K
描述
18-Mbit QDR® II SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)

CY7C1143KV18 数据手册

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CY7C1143KV18, CY7C1145KV18  
18-Mbit QDR® II+ SRAM Four-Word Burst  
Architecture (2.0 Cycle Read Latency)  
18-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)  
Features  
Configurations  
Separate independent read and write data ports  
Supports concurrent transactions  
With Read Cycle Latency of 2.0 cycles:  
CY7C1143KV18 – 1 M × 18  
450-MHz clock for high bandwidth  
CY7C1145KV18 – 512 K × 36  
Four-word burst for reducing address bus frequency  
Functional Description  
Double data rate (DDR) Interfaces on both read and write ports  
(data transferred at 900 MHz) at 450 MHz  
The CY7C1143KV18, and CY7C1145KV18 are 1.8  
V
Synchronous Pipelined SRAMs, equipped with QDR II+  
architecture. Similar to QDR II architecture, QDR II+ architecture  
consists of two separate ports: the read port and the write port to  
access the memory array. The read port has dedicated data  
outputs to support read operations and the write port has  
dedicated data inputs to support write operations. QDR II+  
architecture has separate data inputs and data outputs to  
completely eliminate the need to “turnaround” the data bus that  
exists with common I/O devices. Each port is accessed through  
a common address bus. Addresses for read and write addresses  
are latched on alternate rising edges of the input (K) clock.  
Accesses to the QDR II+ read and write ports are completely  
independent of one another. To maximize data throughput, both  
read and write ports are equipped with DDR interfaces. Each  
address location is associated with four 18-bit words  
(CY7C1143KV18), or 36-bit words (CY7C1145KV18) that burst  
sequentially into or out of the device. Because data is transferred  
into and out of the device on every rising edge of both input  
clocks (K and K), memory bandwidth is maximized while  
simplifying system design by eliminating bus ‘turnarounds’.  
Available in 2.0 clock cycle latency  
Two input clocks (K and K) for precise DDR timing  
SRAM uses rising edges only  
Echo clocks (CQ and CQ) simplify data capture in high-speed  
systems  
Data valid pin (QVLD) to indicate valid data on the output  
Single multiplexed address input bus latches address inputs  
for read and write ports  
Separate port selects for depth expansion  
Synchronous internally self-timed writes  
QDR® II+ operates with 2.0 cycle read latency when DOFF is  
asserted HIGH  
Operates similar to QDR I device with one cycle read latency  
when DOFF is asserted LOW  
Available in × 18, and × 36 configurations  
Full data coherency, providing most current data  
Depth expansion is accomplished with port selects, which  
enables each port to operate independently.  
[1]  
Core VDD = 1.8 V± 0.1 V; I/O VDDQ = 1.4 V to VDD  
Supports both 1.5 V and 1.8 V I/O supply  
All synchronous inputs pass through input registers controlled by  
the K or K input clocks. All data outputs pass through output  
registers controlled by the K or K input clocks. Writes are  
conducted with on-chip synchronous self-timed write circuitry.  
HSTL inputs and variable drive HSTL output buffers  
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)  
Offered in both Pb-free and non Pb-free packages  
JTAG 1149.1 compatible test access port  
Phase-locked loop (PLL) for accurate data placement  
Selection Guide  
Description  
Maximum operating frequency  
450 MHz  
450  
400 MHz Unit  
400  
610  
850  
MHz  
mA  
Maximum operating current  
× 18  
× 36  
670  
930  
Note  
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V  
= 1.4 V to V  
.
DD  
DDQ  
Cypress Semiconductor Corporation  
Document Number: 001-58910 Rev. *D  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised September 5, 2012  

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