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CY7C1049B-25VI

更新时间： 2024-11-05 22:15:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 135K
描述
512K x 8 Static RAM

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CY7C1049B-25VI 数据手册

 浏览型号CY7C1049B-25VI的Datasheet PDF文件第2页浏览型号CY7C1049B-25VI的Datasheet PDF文件第3页浏览型号CY7C1049B-25VI的Datasheet PDF文件第4页浏览型号CY7C1049B-25VI的Datasheet PDF文件第5页浏览型号CY7C1049B-25VI的Datasheet PDF文件第6页浏览型号CY7C1049B-25VI的Datasheet PDF文件第7页 
049B  
CY7C1049B  
512K x 8 Static RAM  
is provided by an active LOW Chip Enable (CE), an active  
LOW Output Enable (OE), and three-state drivers. Writing to  
the device is accomplished by taking Chip Enable (CE) and  
Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0  
through I/O7) is then written into the location specified on the  
address pins (A0 through A18).  
Features  
• High speed  
— tAA = 12 ns  
• Low active power  
— 1320 mW (max.)  
Reading from the device is accomplished by taking Chip En-  
able (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH. Under these conditions, the contents of  
the memory location specified by the address pins will appear  
on the I/O pins.  
• Low CMOS standby power (Commercial L version)  
— 2.75 mW (max.)  
• 2.0V Data Retention (400 µW at 2.0V retention)  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Functional Description[1]  
The CY7C1049B is available in a standard 400-mil-wide  
36-pin SOJ package with center power and ground (revolu-  
tionary) pinout.  
The CY7C1049B is a high-performance CMOS static RAM or-  
ganized as 524,288 words by 8 bits. Easy memory expansion  
Logic Block Diagram  
Pin Configuration  
SOJ  
Top View  
A
A
36  
35  
34  
33  
32  
1
2
3
4
5
6
7
8
9
NC  
0
1
A
A
A
A
18  
17  
16  
15  
A
2
A
A
3
4
CE  
I/O  
31  
30  
29  
28  
OE  
I/O  
0
1
7
I/O  
I/O  
V
I/O  
6
0
GND  
INPUT BUFFER  
CC  
27  
26  
25  
GND 10  
V
CC  
A
1
0
I/O  
I/O  
I/O  
I/O3  
WE  
I/O  
I/O  
A
11  
12  
13  
1
5
4
2
A
A
2
24  
23  
22  
21  
20  
19  
14  
2
A
A
A
A
A
A
5
3
4
14  
15  
16  
17  
18  
13  
A
A
12  
6
A
7
A
11  
10  
5
6
I/O  
I/O  
I/O  
3
4
5
512K x 8  
ARRAY  
A
A
8
A
9
NC  
A
7
A
8
A
9
A
10  
I/O  
6
7
POWER  
DOWN  
COLUMN  
DECODER  
CE  
I/O  
WE  
OE  
Selection Guide  
7C1049B-12 7C1049B-15 7C1049B-17 7C1049B-20 7C1049B-25  
Maximum Access Time (ns)  
12  
15  
17  
195  
8
20  
185  
8
25  
180  
8
Maximum Operating Current (mA)  
240  
220  
Maximum CMOS Standby  
Current (mA)  
Com’l  
8
-
8
-
Com’l/Ind’l L  
Ind’l  
0.5  
-
0.5  
9
0.5  
9
-
-
Note:  
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05169 Rev. *A  
Revised September 13, 2002  
1234567...10

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