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CY7C1019BN-12ZXCT PDF预览

CY7C1019BN-12ZXCT

更新时间: 2024-01-20 15:46:42
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赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
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CY7C1019BN-12ZXCT 数据手册

 浏览型号CY7C1019BN-12ZXCT的Datasheet PDF文件第1页浏览型号CY7C1019BN-12ZXCT的Datasheet PDF文件第3页浏览型号CY7C1019BN-12ZXCT的Datasheet PDF文件第4页浏览型号CY7C1019BN-12ZXCT的Datasheet PDF文件第5页浏览型号CY7C1019BN-12ZXCT的Datasheet PDF文件第6页浏览型号CY7C1019BN-12ZXCT的Datasheet PDF文件第7页 
CY7C1019BN  
Selection Guide  
7C1019BN-12  
7C1019BN-15  
Unit  
ns  
Maximum Access Time  
12  
140  
10  
1
15  
130  
10  
1
Maximum Operating Current  
Maximum Standby Current  
mA  
mA  
mA  
L
Current into Outputs (LOW)......................................... 20 mA  
Maximum Ratings  
Static Discharge Voltage............................................>2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-Up Current.....................................................>200 mA  
Storage Temperature .................................65°C to +150°C  
Ambient Temperature with  
Power Applied.............................................55°C to +125°C  
Operating Range  
Ambient  
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V  
Range  
Commercial  
Industrial  
Temperature[2]  
0°C to +70°C  
VCC  
DC Voltage Applied to Outputs  
5V ± 10%  
5V ± 10%  
in High Z State[1] ....................................–0.5V to VCC + 0.5V  
–40°C to +85°C  
DC Input Voltage[1].................................–0.5V to VCC + 0.5V  
Electrical Characteristics Over the Operating Range  
-12  
Min.  
-15  
Min.  
Parameter  
VOH  
Description  
Test Conditions  
Max.  
Max.  
Unit  
V
Output HIGH Voltage VCC = Min., IOH = – 4.0 mA  
Output LOW Voltage VCC = Min., IOL = 8.0 mA  
Input HIGH Voltage  
2.4  
2.4  
VOL  
0.4  
0.4  
V
VIH  
2.2  
–0.3  
–1  
VCC+ 0.3  
0.8  
2.2  
–0.3  
–1  
VCC+ 0.3  
0.8  
V
VIL  
Input LOW Voltage[1]  
V
IIX  
Input Leakage  
Current  
GND < VI < VCC  
+1  
+1  
µA  
IOZ  
Output Leakage  
Current  
GND < VI < VCC  
Output Disabled  
,
–5  
+5  
–5  
+5  
µA  
mA  
mA  
ICC  
ISB1  
VCC Operating  
Supply Current  
VCC = Max., IOUT = 0 mA,  
f = fMAX = 1/tRC  
140  
130  
Automatic CE  
Power-Down Current VIN > VIH or  
—TTL Inputs  
Max. VCC, CE > VIH  
40  
20  
40  
20  
L
L
VIN < VIL, f = fMAX  
ISB2  
Automatic CE  
Power-Down Current CE > VCC – 0.3V,  
—CMOS Inputs  
Max. VCC  
,
10  
1
10  
1
mA  
VIN > VCC – 0.3V,  
or VIN < 0.3V, f = 0  
Capacitance[3]  
Parameter  
Description  
Test Conditions  
Max.  
Unit  
pF  
CIN  
Input Capacitance  
Output Capacitance  
TA = 25°C, f = 1 MHz,  
VCC = 5.0V  
6
8
COUT  
pF  
Notes:  
1. V (min.) = –2.0V for pulse durations of less than 20 ns.  
IL  
2. T is the “Instant On” case temperature.  
A
3. Tested initially and after any design or process changes that may affect these parameters.  
Document #: 001-06425 Rev. **  
Page 2 of 8  

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