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CY62167EV30LL-45BVXAT PDF预览

CY62167EV30LL-45BVXAT

更新时间： 2024-11-25 14:43:07
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
19页 346K
描述
Asynchronous SRAM

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CY62167EV30LL-45BVXAT 数据手册

 浏览型号CY62167EV30LL-45BVXAT的Datasheet PDF文件第2页浏览型号CY62167EV30LL-45BVXAT的Datasheet PDF文件第3页浏览型号CY62167EV30LL-45BVXAT的Datasheet PDF文件第4页浏览型号CY62167EV30LL-45BVXAT的Datasheet PDF文件第5页浏览型号CY62167EV30LL-45BVXAT的Datasheet PDF文件第6页浏览型号CY62167EV30LL-45BVXAT的Datasheet PDF文件第7页 
CY62167EV30 Automotive MoBL®  
16-Mbit (1M × 16/2M × 8) Static RAM  
16-Mbit (1M  
× 16/2M × 8) Static RAM  
More Battery Life(MoBL®) in portable applications such as  
cellular telephones. The device also has an automatic power  
Features  
down feature that reduces power consumption by 99 percent  
when addresses are not toggling. Place the device in standby  
mode when deselected (CE1 HIGH or CE2 LOW or both BHE and  
■ TSOP I package configurable as 1M × 16 or 2M × 8 SRAM  
■ Very high speed: 45 ns  
■ Temperature ranges  
BLE are HIGH). The input and output pins (I/O0 through I/O15  
)
are placed in a high-impedance state when: the device is  
deselected (CE1 HIGH or CE2 LOW), outputs are disabled (OE  
HIGH), both Byte High Enable and Byte Low Enable are disabled  
(BHE, BLE HIGH), or a write operation is in progress (CE1 LOW,  
CE2 HIGH and WE LOW).  
❐ Automotive-A: –40 °C to +85 °C  
■ Wide voltage range: 2.20 V to 3.60 V  
■ Ultra-low standby power  
❐ Typical standby current: 1.5 A  
❐ Maximum standby current: 12 A  
To write to the device, take Chip Enables (CE1 LOW and CE2  
HIGH) and Write Enable (WE) input LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7) is  
written into the location specified on the address pins (A0 through  
■ Ultra-low active power  
❐ Typical active current: 2.2 mA at f = 1 MHz  
A
19). If Byte High Enable (BHE) is LOW, then data from the I/O  
■ Easy memory expansion with CE1, CE2, and OE Features  
■ Automatic power-down when deselected  
pins (I/O8 through I/O15) is written into the location specified on  
the address pins (A0 through A19).  
To read from the device, take Chip Enables (CE1 LOW and CE2  
HIGH) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data  
from the memory location specified by the address pins appears  
on I/O0 to I/O7. If Byte High Enable (BHE) is LOW, then data from  
memory appears on I/O8 to I/O15. See Truth Table on page 12  
for a complete description of read and write modes.  
■ CMOS for optimum speed and power  
■ Offered in Pb-free 48-ball VFBGAand 48-pin TSOP I packages  
Functional Description  
The CY62167EV30 is a high-performance CMOS static RAM  
organized as 1M words by 16 bits or 2M words by 8 bits. This  
device features an advanced circuit design that provides an ultra  
low active current. Ultra low active current is ideal for providing  
For a complete list of related documentation, click here.  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A 9  
A 8  
A 7  
A 6  
A 5  
A 4  
1M × 16 / 2M x 8  
RAM Array  
I/O0–I/O7  
I/O8–I/O15  
A 3  
A 2  
A 1  
A 0  
COLUMN DECODER  
BYTE  
BHE  
WE  
CE2  
CE2  
CE  
1
PowerDown  
Circuit  
CE  
1
OE  
BHE  
BLE  
BLE  
Cypress Semiconductor Corporation  
Document Number: 38-05446 Rev. *Q  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised August 2, 2018  
1234567...19

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与CY62167EV30LL-45BVXAT相关器件

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CY62167EV30LL-45BVXI CYPRESS

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 		16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167EV30LL-45BVXI INFINEON

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 		Asynchronous SRAM
CY62167EV30LL-45BVXIT CYPRESS

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 		Standard SRAM, 1MX16, 45ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, ROHS COMPLIANT, VFBGA-48
CY62167EV30LL-45BVXIT INFINEON

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 		Asynchronous SRAM
CY62167EV30LL-45ZXA CYPRESS

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 		16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167EV30LL-45ZXA INFINEON

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 		Asynchronous SRAM
CY62167EV30LL-45ZXAT CYPRESS

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 		Standard SRAM, 1MX16, 45ns, CMOS, PDSO48, 12 X 18.40 MM, 1 MM HEIGHT, LEAD FREE, MO-142, T
CY62167EV30LL-45ZXAT INFINEON

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 		Asynchronous SRAM
CY62167EV30LL-45ZXI CYPRESS

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 		16-Mbit (1M x 16 / 2M x 8) Static RAM
CY62167EV30LL-45ZXI INFINEON

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 		Asynchronous SRAM

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