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CY62127DV30L PDF预览

CY62127DV30L

更新时间: 2022-11-24 21:45:01
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 375K
描述
1 Mb (64K x 16) Static RAM

CY62127DV30L 数据手册

 浏览型号CY62127DV30L的Datasheet PDF文件第2页浏览型号CY62127DV30L的Datasheet PDF文件第3页浏览型号CY62127DV30L的Datasheet PDF文件第4页浏览型号CY62127DV30L的Datasheet PDF文件第6页浏览型号CY62127DV30L的Datasheet PDF文件第7页浏览型号CY62127DV30L的Datasheet PDF文件第8页 
CY62127DV30  
MoBL®  
Switching Characteristics (Over the Operating Range)[11]  
CY62127DV30-45 [8] CY62127DV30-55 CY62127DV30-70  
Parameter  
Read Cycle  
tRC  
tAA  
tOHA  
Description  
Min.  
45  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
Read Cycle Time  
Address to Data Valid  
Data Hold from Address Change  
CE LOW to Data Valid  
55  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
45  
55  
70  
10  
10  
10  
tACE  
tDOE  
45  
25  
55  
25  
70  
35  
OE LOW to Data Valid  
OE LOW to Low Z[12]  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tPU  
5
10  
0
5
10  
0
5
10  
0
OE HIGH to High Z[12,14]  
CE LOW to Low Z[12]  
15  
20  
20  
20  
25  
25  
CE HIGH to High Z[12,14]  
CE LOW to Power-up  
tPD  
CE HIGH to Power-down  
BLE/BHE LOW to Data Valid  
BLE/BHE LOW to Low Z[12]  
BLE/BHE HIGH to High-Z[12,14]  
45  
45  
55  
55  
70  
70  
tDBE  
tLZBE  
[13]  
5
5
5
tHZBE  
Write Cycle[15]  
15  
20  
25  
tWC  
tSCE  
tAW  
tHA  
tSA  
tPWE  
tBW  
tSD  
tHD  
tHZWE  
Write Cycle Time  
CE LOW to Write End  
45  
40  
40  
0
55  
40  
40  
0
70  
60  
60  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Set-up to Write End  
Address Hold from Write End  
Address Set-up to Write Start  
WE Pulse Width  
BLE/BHE LOW to Write End  
Data Set-up to Write End  
Data Hold from Write End  
WE LOW to High Z[12,14]  
WE HIGH to Low Z[12]  
0
0
0
35  
40  
25  
0
40  
40  
25  
0
50  
60  
30  
0
15  
20  
25  
tLZWE  
10  
10  
5
Notes:  
11. Test conditions assume signal transition time of 1V/ns or less, timing reference levels of V  
/2, input pulse levels of 0 to V  
, and output loading of the  
CC(typ.)  
CC(typ.)  
specified I  
.
OL  
12. At any given temperature and voltage condition, t  
given device.  
is less than t  
, t  
is less than t  
, t  
is less than t  
, and t  
is less than t  
for any  
LZWE  
HZCE  
LZCE HZBE  
LZBE HZOE  
LZOE  
HZWE  
13. If both byte enables are toggled together, this value is 10 ns.  
14. t  
, t  
, t  
, and t  
transitions are measured when the outputs enter a high-impedance state.  
HZOE HZCE HZBE  
HZWE  
15. The internal Write time of the memory is defined by the overlap of WE, CE = V , BHE and/or BLE = V . All signals must be ACTIVE to initiate a write and any  
IL  
IL  
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates  
the write.  
Document #: 38-05229 Rev. *D  
Page 5 of 12  

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