Datasheet > CY62127DV30L

CY62127DV30L

更新时间： 2022-11-24 21:45:01

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
12页	375K
描述
1 Mb (64K x 16) Static RAM

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CY62127DV30L 数据手册

CY62127DV30

MoBL^®

DC Input Voltage^[5]................................ −0.3V to V_CC+ 0.3V

Output Current into Outputs (LOW)............................. 20 mA

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

Static Discharge Voltage.......................................... > 2001V

lines, not tested.)

(per MIL-STD-883, Method 3015)

Storage Temperature ..................................–65°C to +150°C

Latch-up Current.....................................................> 200 mA

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Operating Range

Supply Voltage to Ground Potential

[6]

Range

Ambient Temperature (T_A)

V_CC

......................................................................... −0.3V to 3.9V

Industrial

–40°C to +85°C

2.2V to 3.6V

DC Voltage Applied to Outputs

in High-Z State^[5]....................................−0.3V to V_CC+ 0.3V

DC Electrical Characteristics (Over the Operating Range)

CY62127DV30-45 CY62127DV30-55 CY62127DV30-70

Parameter Description

Test Conditions

Min. Typ.^[4]Max. Min. Typ.^[4]Max. Min. Typ.^[4]Max. Unit

V_OH

V_OL

V_IH

Output HIGH 2.2 < V_CC< 2.7 I_OH= −0.1 mA 2.0

2.0

2.4

2.0

2.4

Voltage

2.7 < V_CC< 3.6 I_OH= −1.0 mA 2.4

Output LOW 2.2 < V_CC< 2.7 I_OL= 0.1 mA

0.4

Voltage

2.7 < V_CC< 3.6 I_OL= 2.1 mA

Input HIGH

Voltage

2.2 < V_CC< 2.7

1.8

2.2

V_CC1.8

V_CC

+ 0.3

2.7 < V_CC< 3.6

V_CC2.2

+ 0.3

V_CC2.2

+ 0.3

V_CC

+ 0.3

V_IL

I_IX

Input LOW

Voltage

2.2 < V_CC< 2.7

2.7 < V_CC< 3.6

GND < V_I< V_CC

−0.3

−1

0.6 −0.3

0.8 −0.3

0.6 −0.3

0.8 −0.3

0.6

0.8

Input

−1

+1 µA

10 mA

Leakage

Current

I_OZ

Output

GND < V_O< V_CC

Output Disabled

−1

Leakage

Current

I_CC

V_CC

f = f_MAX= 1/t_RCV_CC= 3.6V,

6.5

Operating

Supply

Current

I_OUT= 0 mA,

f = 1 MHz

0.85 1.5

CMOS level

I_SB1

Automatic CE CE > V_CC− 0.2V,

1.5

µA

Power-down

Current—

V_IN> V_CC− 0.2V, V_IN< 0.2V,

f = f_MAX(Address and

CMOS Inputs Data Only),

f = 0 (OE, WE, BHE and

BLE)

I_SB2

Automatic CE CE > V_CC− 0.2V,

1.5

Power-down V_IN> V_CC− 0.2V or

Current—

V_IN< 0.2V,

CMOS Inputs f = 0, V_CC= 3.6V

Notes:

5. V

= −2.0V for pulse durations less than 20 ns., V

= V +0.75V for pulse durations less than 20 ns.

IH(max.) CC

IL(min.)

6. Full device Operation Requires linear Ramp of V from 0V to V (min) & V must be stable at V (min) for 500 µs.

Document #: 38-05229 Rev. *D

Page 3 of 12

1 234 5 6 7...12

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型号	品牌	描述	获取价格	数据表
CY62127DV30L-55BVI	CYPRESS	1 Mb (64K x 16) Static RAM	获取价格
CY62127DV30L-55BVXE	CYPRESS	1-Mb (64K x 16) Static RAM	获取价格
CY62127DV30L-55BVXET	CYPRESS	Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48	获取价格
CY62127DV30L-55ZSI	CYPRESS	1 Mb (64K x 16) Static RAM	获取价格
CY62127DV30L-55ZSXE	CYPRESS	1-Mb (64K x 16) Static RAM	获取价格
CY62127DV30L-55ZSXI	CYPRESS	1 Mb (64K x 16) Static RAM	获取价格

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