5秒后页面跳转
CY62127DV30L PDF预览

CY62127DV30L

更新时间: 2022-11-24 21:45:01
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
12页 375K
描述
1 Mb (64K x 16) Static RAM

CY62127DV30L 数据手册

 浏览型号CY62127DV30L的Datasheet PDF文件第1页浏览型号CY62127DV30L的Datasheet PDF文件第2页浏览型号CY62127DV30L的Datasheet PDF文件第3页浏览型号CY62127DV30L的Datasheet PDF文件第5页浏览型号CY62127DV30L的Datasheet PDF文件第6页浏览型号CY62127DV30L的Datasheet PDF文件第7页 
CY62127DV30  
MoBL®  
Capacitance[7]  
Parameter  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
Max.  
8
8
Unit  
pF  
pF  
CIN  
COUT  
TA = 25°C, f = 1 MHz  
VCC = VCC(typ)  
Thermal Resistance  
Parameter  
Description  
Test Conditions  
FBGA TSOP II Unit  
θJA  
θJC  
Thermal Resistance (Junction to Ambient)[7]  
Thermal Resistance (Junction to Case)[7]  
Still Air, soldered on a 3 x 4.5 inch,  
55  
76  
°C/W  
two-layer printed circuit board  
12  
11  
°C/W  
AC Test Loads and Waveforms[8]  
R1  
VCC  
OUTPUT  
ALL INPUT PULSES  
V
Typ  
CC  
90%  
10%  
90%  
10%  
GND  
R2  
CL = 50 pF  
Rise Time:  
1 V/ns  
Fall Time:  
1 V/ns  
INCLUDING  
JIG AND  
SCOPE  
Equivalent to:  
THÉVENIN EQUIVALENT  
RTH  
OUTPUT  
VTH  
Parameters  
3.0V (2.7  
3.6V)  
Unit  
2.5V (2.22.7V)  
R1  
R2  
RTH  
VTH  
1103  
1554  
645  
16600  
15400  
8000  
1.2  
1.75  
V
Data Retention Characteristics  
Parameter  
VDR  
ICCDR  
Description  
VCC for Data Retention  
Data Retention Current  
Conditions  
Min.  
1.5  
Typ.[4]  
Max.  
Unit  
V
VCC=1.5V, CE > VCC 0.2V,  
VIN > VCC 0.2V or VIN < 0.2V  
L
LL  
4
3
µA  
[7]  
tCDR  
Chip Deselect to Data  
Retention Time  
Operation Recovery Time  
0
ns  
[9]  
tR  
200  
µs  
Data Retention Waveform[10]  
DATA RETENTION MODE  
VDR > 1.5V  
V
V
CC(min.)  
VCC  
CC(min.)  
tCDR  
tR  
CEor  
.
BHE BLE  
Notes:  
7. Tested initially and after any design or proces changes that may affect these parameters.  
8. Test condition for the 45-ns part is a load capacitance of 30 pF.  
9. Full device operation requires linear V ramp from V to V > 200 µs.  
CC(min.)  
CC  
DR  
.
10. BHE BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the Chip Enable signals or by disabling both.  
Document #: 38-05229 Rev. *D  
Page 4 of 12  

与CY62127DV30L相关器件

型号 品牌 描述 获取价格 数据表
CY62127DV30L-55BVI CYPRESS 1 Mb (64K x 16) Static RAM

获取价格

CY62127DV30L-55BVXE CYPRESS 1-Mb (64K x 16) Static RAM

获取价格

CY62127DV30L-55BVXET CYPRESS Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48

获取价格

CY62127DV30L-55ZSI CYPRESS 1 Mb (64K x 16) Static RAM

获取价格

CY62127DV30L-55ZSXE CYPRESS 1-Mb (64K x 16) Static RAM

获取价格

CY62127DV30L-55ZSXI CYPRESS 1 Mb (64K x 16) Static RAM

获取价格