CY62127DV30
MoBL®
Capacitance[7]
Parameter
Description
Input Capacitance
Output Capacitance
Test Conditions
Max.
8
8
Unit
pF
pF
CIN
COUT
TA = 25°C, f = 1 MHz
VCC = VCC(typ)
Thermal Resistance
Parameter
Description
Test Conditions
FBGA TSOP II Unit
θJA
θJC
Thermal Resistance (Junction to Ambient)[7]
Thermal Resistance (Junction to Case)[7]
Still Air, soldered on a 3 x 4.5 inch,
55
76
°C/W
two-layer printed circuit board
12
11
°C/W
AC Test Loads and Waveforms[8]
R1
VCC
OUTPUT
ALL INPUT PULSES
V
Typ
CC
90%
10%
90%
10%
GND
R2
CL = 50 pF
Rise Time:
1 V/ns
Fall Time:
1 V/ns
INCLUDING
JIG AND
SCOPE
Equivalent to:
THÉVENIN EQUIVALENT
RTH
OUTPUT
VTH
Parameters
3.0V (2.7
–
3.6V)
Unit
Ω
2.5V (2.2– 2.7V)
R1
R2
RTH
VTH
1103
1554
645
16600
15400
8000
1.2
Ω
Ω
1.75
V
Data Retention Characteristics
Parameter
VDR
ICCDR
Description
VCC for Data Retention
Data Retention Current
Conditions
Min.
1.5
Typ.[4]
Max.
Unit
V
VCC=1.5V, CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
L
LL
4
3
µA
[7]
tCDR
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
ns
[9]
tR
200
µs
Data Retention Waveform[10]
DATA RETENTION MODE
VDR > 1.5V
V
V
CC(min.)
VCC
CC(min.)
tCDR
tR
CEor
.
BHE BLE
Notes:
7. Tested initially and after any design or proces changes that may affect these parameters.
8. Test condition for the 45-ns part is a load capacitance of 30 pF.
9. Full device operation requires linear V ramp from V to V > 200 µs.
CC(min.)
CC
DR
.
10. BHE BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the Chip Enable signals or by disabling both.
Document #: 38-05229 Rev. *D
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