CY2300
Storage temperature ................................ –65 °C to +150 °C
Junction temperature ................................................ 150 °C
Maximum Ratings
Supply voltage to ground potential ..............–0.5 V to +7.0 V
DC input voltage (except ref) ..............–0.5 V to VDD + 0.5 V
DC input voltage REF .......................................–0.5 V to 7 V
Static discharge voltage
(per MIL-STD-883, method 3015) ..........................> 2000 V
Operating Conditions
Parameter
VDD
Description
Min
3.0
0
Max
3.6
70
18
12
7
Unit
V
Supply voltage
TA
CL
Operating temperature (ambient temperature)
Load capacitance, 10 MHz < FOUT < 133.33 MHz
Load capacitance,133.33 MHz < FOUT < 166.67 MHz
Input capacitance
°C
pF
pF
pF
ms
–
–
CIN
tPU
–
Power-up time for all VDD's to reach minimum specified voltage (power ramps must
be monotonic)
0.05
50
Electrical Characteristics
Parameter
VIL
Description
Test Conditions
Min
–
Max
0.8
–
Unit
V
Input LOW voltage
Input HIGH voltage
Input LOW current
Input HIGH current
Output LOW voltage [2]
Output HIGH voltage [2]
Supply current
VIH
IIL
2.0
–
V
VIN = 0 V
100
50
0.4
–
µA
µA
V
IIH
VIN = VDD
IOL = 8 mA
IOH = –8 mA
–
VOL
VOH
IDD
–
2.4
–
V
Unloaded outputs, REFIN = 66 MHz
Unloaded outputs, REFIN = 33 MHz
Unloaded outputs, REFIN = 20 MHz
45
32
18
mA
mA
mA
–
–
Thermal Resistance
Parameter [3]
Description
Test Conditions
8-pin SOIC
Unit
θJA
Thermal resistance
(junction to ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
140
°C/W
θJC
Thermal resistance
(junction to case)
54
°C/W
Notes
2. Parameter is guaranteed by design and characterization. It is not 100% tested in production.
3. These parameters are guaranteed by design and are not tested.
Document Number: 38-07252 Rev. *J
Page 4 of 13