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CY14V116N-BZ45XI PDF预览

CY14V116N-BZ45XI

更新时间: 2024-11-06 01:13:03
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
25页 1299K
描述
16-Mbit (1024 K × 16) nvSRAM

CY14V116N-BZ45XI 数据手册

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CY14V116N  
16-Mbit (1024 K × 16) nvSRAM  
Industrial temperature: –40 C to +85 C  
Features  
165-ball fine-pitch ball grid array (FBGA) package  
Restriction of hazardous substances (RoHS) compliant  
16-Mbit nonvolatile static random access memory (nvSRAM)  
30-ns and 45-ns access times  
Logically organized as 1024 K × 16  
Hands-off automatic STORE on power-down with only a  
small capacitor  
Functional Description  
The Cypress CY14V116N is a fast SRAM, with a nonvolatile  
element in each memory cell. The memory is organized as  
1024 K words of 16 bits each. The embedded nonvolatile  
elements incorporate QuantumTrap technology, producing the  
world’s most reliable nonvolatile memory. The SRAM can be  
read and written an infinite number of times. The nonvolatile data  
residing in the nonvolatile elements do not change when data is  
written to the SRAM. Data transfers from the SRAM to the  
nonvolatile elements (the STORE operation) takes place  
automatically at power-down. On power-up, data is restored to  
the SRAM (the RECALL operation) from the nonvolatile memory.  
Both the STORE and RECALL operations are also available  
under software control.  
STORE to QuantumTrap nonvolatile elements is initiated by  
software, device pin, or AutoStore on power-down  
RECALL to SRAM initiated by software or power-up  
High reliability  
Infinite read, write, and RECALL cycles  
1 million STORE cycles to QuantumTrap  
Data retention: 20 years  
Sleep mode operation  
Low power consumption  
Active current of 75 mA at 45 ns  
Standby mode current of 650 A  
Sleep mode current of 10 A  
Operating voltage  
Core VCC = 2.7 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V  
For a complete list of related documentation, click here.  
Logic Block Diagram  
V
V
V
CAP  
CC  
CCQ  
POWER CONTROL  
SLEEP MODE  
CONTROL  
ZZ  
QUANTUMTRAP  
4096 X 4096  
STORE / RECALL  
CONTROL  
HSB  
STORE  
RECALL  
STATIC RAM  
ARRAY  
4096 X 4096  
SOFTWARE  
DETECT  
A
-A  
11  
0
A
-A  
2
14  
OE  
CE  
[1]  
WE  
BLE  
BHE  
ZZ  
COLUMN IO  
DQ -DQ  
15  
0
COLUMN DECODER  
A
-A  
19  
12  
Note  
1. In this datasheet, CE refers to the internal logical combination of CE and CE , such that when CE is LOW and CE is HIGH, CE is LOW. For all other cases CE is HIGH.  
1
2
1
2
Cypress Semiconductor Corporation  
Document #: 001-75791 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised January 7, 2015  

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