CY14V256LA
256-Kbit (32 K × 8) nvSRAM
256-Kbit (32
K × 8) nvSRAM
Features
Functional Description
■ 35 ns access time
The Cypress CY14V256LA is a fast static RAM, with a
nonvolatile element in each memory cell. The memory is
organized as 32 K bytes of 8 bits each. The embedded
nonvolatile elements incorporate QuantumTrap technology,
producing the world’s most reliable nonvolatile memory. The
SRAM provides infinite read and write cycles, while independent
nonvolatile data resides in the highly reliable QuantumTrap cell.
Data transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control.
■ Internally organized as 32 K × 8
■ Hands off automatic STORE on power down with only a small
capacitor
■ STORE to QuantumTrap nonvolatile elements initiated by
software, device pin, or AutoStore on power down
■ RECALL to SRAM initiated by software or power up
■ Infinite read, write, and recall cycles
■ 1 million STORE cycles to QuantumTrap
■ 20 year data retention
■ Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V
■ Industrial temperature
■ 48-ball fine-pitch ball grid array (FBGA) package
■ Pb-free and restriction of hazardous substances (RoHS)
compliance
Logic Block Diagram
Logic Block Diagram
V
V
CC
CCQ V
CAP
Quantum Trap
512 X 512
POWER
CONTROL
A5
STORE
A6
A7
A8
RECALL
STORE/
RECALL
CONTROL
STATIC RAM
ARRAY
512 X 512
HSB
A9
A11
A12
A13
A14
SOFTWARE
DETECT
A14
-
A2
DQ0
COLUMN I/O
DQ1
DQ2
DQ3
COLUMN DEC
DQ4
DQ5
DQ6
DQ7
A0
A4
A10
A1
A3
A2
OE
CE
WE
Cypress Semiconductor Corporation
Document Number: 001-76295 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised May 3, 2013