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CY14V256LA-BA35XIT PDF预览

CY14V256LA-BA35XIT

更新时间: 2024-11-21 14:55:11
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
22页 485K
描述
nvSRAM (non-volatile SRAM)

CY14V256LA-BA35XIT 数据手册

 浏览型号CY14V256LA-BA35XIT的Datasheet PDF文件第2页浏览型号CY14V256LA-BA35XIT的Datasheet PDF文件第3页浏览型号CY14V256LA-BA35XIT的Datasheet PDF文件第4页浏览型号CY14V256LA-BA35XIT的Datasheet PDF文件第5页浏览型号CY14V256LA-BA35XIT的Datasheet PDF文件第6页浏览型号CY14V256LA-BA35XIT的Datasheet PDF文件第7页 
CY14V256LA  
256-Kbit (32K × 8) nvSRAM  
256-Kbit (32K  
× 8) nvSRAM  
Features  
Functional Description  
35 ns access time  
The Cypress CY14V256LA is a fast static RAM, with a  
nonvolatile element in each memory cell. The memory is  
organized as 32K bytes of 8 bits each. The embedded  
nonvolatile elements incorporate QuantumTrap technology,  
producing the world’s most reliable nonvolatile memory. The  
SRAM provides infinite read and write cycles, while independent  
nonvolatile data resides in the highly reliable QuantumTrap cell.  
Data transfers from the SRAM to the nonvolatile elements (the  
STORE operation) takes place automatically at power down. On  
power-up, data is restored to the SRAM (the RECALL operation)  
from the nonvolatile memory. Both the STORE and RECALL  
operations are also available under software control.  
Internally organized as 32K × 8  
Hands off automatic STORE on power down with only a small  
capacitor  
STORE to QuantumTrap nonvolatile elements initiated by  
software, device pin, or AutoStore on power down  
RECALL to SRAM initiated by software or power up  
Infinite read, write, and recall cycles  
1 million STORE cycles to QuantumTrap  
20 year data retention  
For a complete list of related documentation, click here.  
Core VCC = 3.0 V to 3.6 V; I/O VCCQ = 1.65 V to 1.95 V  
Industrial temperature  
48-ball fine-pitch ball grid array (FBGA) package  
Pb-free and restriction of hazardous substances (RoHS)  
compliance  
Logic Block Diagram  
V
V
CC  
CCQ V  
CAP  
Quantum Trap  
512 X 512  
POWER  
CONTROL  
A5  
STORE  
A6  
A7  
A8  
RECALL  
STORE/  
RECALL  
CONTROL  
STATIC RAM  
ARRAY  
512 X 512  
HSB  
A9  
A11  
A12  
A13  
A14  
SOFTWARE  
DETECT  
A14  
-
A2  
DQ0  
COLUMN I/O  
DQ1  
DQ2  
DQ3  
COLUMN DEC  
DQ4  
DQ5  
DQ6  
DQ7  
A0  
A4  
A10  
A1  
A3  
A2  
OE  
CE  
WE  
Cypress Semiconductor Corporation  
Document Number: 001-76295 Rev. *E  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 9, 2018  

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