Datasheet > 存储 > SRAM> CXK77K36R320GB-4

CXK77K36R320GB-4

更新时间： 2025-08-11 02:51:51

品牌	Logo	应用领域
索尼 - SONY		存储内存集成电路静态存储器时钟
页数	文件大小	规格书
22页	177K
描述
32Mb LW R-R HSTL High Speed Synchronous SRAM (1Mb x 36)

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中文翻译

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技术参数
数据手册

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CXK77K36R320GB-4 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	BGA, BGA119,7X17,50	针数：	119
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.92
Is Samacsys：	N	最长访问时间：	2 ns
最大时钟频率 (fCLK)：	250 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B119	JESD-609代码：	e0
长度：	22 mm	内存密度：	37748736 bit
内存集成电路类型：	LATE-WRITE SRAM	内存宽度：	36
功能数量：	1	端子数量：	119
字数：	1048576 words	字数代码：	1000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：		组织：	1MX36
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	BGA	封装等效代码：	BGA119,7X17,50
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	240
电源：	1.5,2.5 V	认证状态：	Not Qualified
座面最大高度：	2.4 mm	最大待机电流：	0.18 A
最小待机电流：	2.38 V	子类别：	SRAMs
最大压摆率：	0.65 mA	最大供电电压 (Vsup)：	2.63 V
最小供电电压 (Vsup)：	2.37 V	标称供电电压 (Vsup)：	2.5 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子面层：	TIN LEAD
端子形式：	BALL	端子节距：	1.27 mm
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	10
宽度：	14 mm	Base Number Matches：	1

CXK77K36R320GB-4 数据手册

SONY

CXK77K36R320GB

3/33/4

32Mb LW R-R HSTL High Speed Synchronous SRAM (1Mb x 36)

Preliminary

Description

The CXK77K36R320GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 1,048,576 words

by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a one-deep write buffer

onto a single monolithic IC. Register - Register (R-R) read operations and Late Write (LW) write operations are supported, pro-

viding a high-performance user interface.

All address and control input signals except G (Output Enable) and ZZ (Sleep Mode) are registered on the rising edge of the K

differential input clock.

During read operations, output data is driven valid from the rising edge of K, one full clock cycle after the address is registered.

During write operations, input data is registered on the rising edge of K, one full clock cycle after the address is registered.

Sleep (power down) capability is provided via the ZZ input signal.

Output drivers are series terminated, and output impedance is programmable via the ZQ input pin. By connecting an external

control resistor RQ between ZQ and V , the impedance of the output drivers can be precisely controlled.

333 MHz operation is obtained from a single 2.5V power supply. JTAG boundary scan interface is provided using a subset of

IEEE standard 1149.1 protocol.

Features

•

3 Speed Bins

Cycle Time / Access Time

3.0ns / 1.6ns

-3

-33

-4

3.3ns / 1.6ns

4.0ns / 2.0ns

•

Single 2.5V power supply (V ): 2.5V ± 5%

Note: 1.8V V is also supported. Please contact Sony Memory Marketing Department for further information.

Dedicated output supply voltage (V

): 1.5V ± 0.1V

DDQ

Note: 1.8V V

is also supported. Please contact Sony Memory Marketing Department for further information.

DDQ

•

HSTL-compatible I/O interface with dedicated input reference voltage (V ): 0.75V typical

REF

Late Write (LW) write protocol

Full read/write coherency

Byte Write capability

Differential input clocks (K/K)

Asynchronous output enable (G)

Sleep (power down) mode via dedicated mode pin (ZZ)

Programmable output driver impedance

JTAG boundary scan (subset of IEEE standard 1149.1)

119 pin (7x17), 1.27mm pitch, 14mm x 22mm Ball Grid Array (BGA) package

32Mb LW R-R, rev 0.6

1 / 22

March 16, 2004

12 3 4 5 6 7...22

中文翻译

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与CXK77K36R320GB-4相关器件

型号	品牌	获取价格	描述	数据表
CXK77L18162AGB	ETC	获取价格	MEMORY-UHS Synch SRAMs＜/A＞＜/I＞ 16Meg Ultra-Hi
CXK77L18162GB	ETC	获取价格	MEMORY-UHS Synch SRAMs 16Meg Ultra-High-Speed Synchronous SRAM (1M x 18) (23 pages 312K Re
CXK77L18162GB-25	SONY	获取价格	DDR SRAM, 1MX18, 1.8ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77L18162GB-3	SONY	获取价格	DDR SRAM, 1MX18, 1.9ns, CMOS, PBGA153, 14 X 22 MM, 1.27 MM PITCH, BGA-153
CXK77L18R160GB	ETC	获取价格	MEMORY-UHS Synch SRAMs＜/A＞＜/I＞ 16Meg Ultra-Hi
CXK77L18R160GB-4	SONY	获取价格	Late-Write SRAM, 1MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77N18B160GB-3	SONY	获取价格	Late-Write SRAM, 1MX18, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77N18B160GB-33	SONY	获取价格	Late-Write SRAM, 1MX18, 1.6ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77N18B160GB-4	SONY	获取价格	Late-Write SRAM, 1MX18, 2ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119
CXK77N18R160GB-3	SONY	获取价格	Late-Write SRAM, 1MX18, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119

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