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CXK581000AYM-10LL PDF预览

CXK581000AYM-10LL

更新时间: 2024-11-07 22:06:03
品牌 Logo 应用领域
索尼 - SONY /
页数 文件大小 规格书
12页 290K
描述
131072-word x 8-bit High Speed CMOS Static RAM

CXK581000AYM-10LL 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1-R, TSSOP32,.8,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.38最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1-R
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified反向引出线:YES
座面最大高度:1.2 mm最小待机电流:2 V
子类别:SRAMs最大压摆率:0.06 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

CXK581000AYM-10LL 数据手册

 浏览型号CXK581000AYM-10LL的Datasheet PDF文件第2页浏览型号CXK581000AYM-10LL的Datasheet PDF文件第3页浏览型号CXK581000AYM-10LL的Datasheet PDF文件第4页浏览型号CXK581000AYM-10LL的Datasheet PDF文件第5页浏览型号CXK581000AYM-10LL的Datasheet PDF文件第6页浏览型号CXK581000AYM-10LL的Datasheet PDF文件第7页 
-55LL/70LL/10LL  
-55SL/70SL/10SL  
CXK581000ATM/AYM/AM/AP  
131072-word × 8-bit High Speed CMOS Static RAM  
For the availability of this product, please contact the sales office.  
Description  
CXK581000ATM  
CXK581000AYM  
The CXK581000ATM/AYM/AM/AP is a high speed  
CMOS static RAM organized as 131072-words by  
8 bits.  
32 pin TSOP (Plastic)  
32 pin TSOP (Plastic)  
A polysilicon TFT cell technology realized extremely low  
stand- by current and higher data retention stability.  
Special feature are low power consumption, high  
speed and broad package line-up.  
The CXK581000ATM/AYM/AM/AP ia a suitable  
RAM for portable equipment with battery back up.  
CXK581000AM  
CXK581000AP  
32 pin SOP (Plastic)  
32 pin DIP (Plastic)  
Features  
Fast access time:  
CXK581000ATM/AYM/AM/AP  
-55LL/55SL  
(Access time)  
55ns (Max.)  
70ns (Max.)  
100ns (Max.)  
-70LL/70SL  
-10LL/10SL  
Low standby current:  
CXK581000ATM/AYM/AM/AP  
-55LL/70LL/10LL  
Block Diagram  
20µA (Max.)  
12µA (Max.)  
-55SL/70SL/10SL  
A10  
A11  
Low data retention current  
CXK581000ATM/AYM/AM/AP  
-55LL/70LL/10LL  
A9  
A8  
A13  
VCC  
Memory  
Matrix  
1024 × 1024  
Row  
Decoder  
Buffer  
12µA (Max.)  
4µA (Max.)  
A15  
A16  
GND  
-55SL/70SL/10SL  
A14  
A12  
Single +5V supply: +5V ±10%  
A7  
Low voltage data retention: 2.0V (Min.)  
Broad package line-up  
A6  
A5  
CXK581000ATM/AYM  
A4  
I/O Gate  
Column  
Decoder  
Buffer  
A3  
A2  
8mm × 20mm 32 pin TSOP package  
CXK581000AM  
CXK581000AP  
525mil 32 pin SOP package  
600mil 32 pin DIP package  
A1  
A0  
OE  
Buffer  
Functions  
WE  
I/O Buffer  
131072-word × 8-bit static RAM  
CE1  
CE2  
I/O 1  
I/O 8  
Structure  
Silicon gate CMOS IC  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E92756D53-PP  

CXK581000AYM-10LL 替代型号

型号 品牌 替代类型 描述 数据表
TC551001ATRL-10L(LV) TOSHIBA

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