-55LL/70LL/10LL
-55SL/70SL/10SL
CXK581000ATM/AYM/AM/AP
131072-word × 8-bit High Speed CMOS Static RAM
For the availability of this product, please contact the sales office.
Description
CXK581000ATM
CXK581000AYM
The CXK581000ATM/AYM/AM/AP is a high speed
CMOS static RAM organized as 131072-words by
8 bits.
32 pin TSOP (Plastic)
32 pin TSOP (Plastic)
A polysilicon TFT cell technology realized extremely low
stand- by current and higher data retention stability.
Special feature are low power consumption, high
speed and broad package line-up.
The CXK581000ATM/AYM/AM/AP ia a suitable
RAM for portable equipment with battery back up.
CXK581000AM
CXK581000AP
32 pin SOP (Plastic)
32 pin DIP (Plastic)
Features
• Fast access time:
CXK581000ATM/AYM/AM/AP
-55LL/55SL
(Access time)
55ns (Max.)
70ns (Max.)
100ns (Max.)
-70LL/70SL
-10LL/10SL
• Low standby current:
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
Block Diagram
20µA (Max.)
12µA (Max.)
-55SL/70SL/10SL
A10
A11
• Low data retention current
CXK581000ATM/AYM/AM/AP
-55LL/70LL/10LL
A9
A8
A13
VCC
Memory
Matrix
1024 × 1024
Row
Decoder
Buffer
12µA (Max.)
4µA (Max.)
A15
A16
GND
-55SL/70SL/10SL
A14
A12
• Single +5V supply: +5V ±10%
A7
• Low voltage data retention: 2.0V (Min.)
• Broad package line-up
A6
A5
• CXK581000ATM/AYM
A4
I/O Gate
Column
Decoder
Buffer
A3
A2
8mm × 20mm 32 pin TSOP package
• CXK581000AM
• CXK581000AP
525mil 32 pin SOP package
600mil 32 pin DIP package
A1
A0
OE
Buffer
Functions
WE
I/O Buffer
131072-word × 8-bit static RAM
CE1
CE2
I/O 1
I/O 8
Structure
Silicon gate CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
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