CXG1178K PDF预览

CXG1178K

更新时间: 2025-08-11 03:27:43
品牌 Logo 应用领域
索尼 - SONY 放大器功率放大器
页数 文件大小 规格书
6页 75K
描述
POWER AMPLIFIER MODULE FOR JCDMA

CXG1178K 数据手册

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CXG1178K  
Power Amplifier Module for JCDMA  
Description  
8 pin LCC (Ceramic)  
The CXG1178K is the power amplifier module which  
operates at a single power supply. This IC is designed  
using the Sony's original p-Gate HFET process.  
Features  
Single power supply operation:  
VDD1 = VDD2 = 3.5V (High mode),  
1.5V (Mid mode),  
1.0V (Low mode),  
VGG = 2.8V  
Ultrasmall package: 0.027cc (4.5mm × 4.5mm × 1.35mm)  
High efficiency: ηadd = 40.5%@POUT = 27.5dBm (High mode),  
ηadd = 17.6%@POUT = 14dBm (Mid mode)  
Output power (High/Mid/Low mode switching supported):  
POUT = 18 to 27.5dBm: High mode,  
POUT = 14 to 18dBm: Mid mode,  
POUT 14dBm: Low mode  
Gain (High mode): Gp = 28.5dB (@900MHz)  
Applications  
Power amplifier for JCDMA system cellular phones  
Structure  
p-Gate HFET module  
Absolute Maximum Ratings (Ta = 25°C)  
Operating case temperature Tcase  
–30 to +110  
°C  
°C  
V
Storage temperature  
Bias voltage  
Tstg  
–30 to +125  
VDD1, VDD2  
VGG  
6
Bias voltage  
3.3  
V
(@VDD1 = VDD2 3.5V)  
Input power  
PIN  
8
dBm  
Recommended Bias Voltage Conditions  
VDD1 = VDD2 = 1.0 to 4.2V  
VGG = 2.8V ± 1%  
Descriptions in this specification are specified for the Sony's recommended evaluation board .  
GaAs module is ESD sensitive devices. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E04660-PS  

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