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CXG1188UR PDF预览

CXG1188UR

更新时间: 2024-02-26 11:57:49
品牌 Logo 应用领域
索尼 - SONY 开关光电二极管
页数 文件大小 规格书
4页 70K
描述
High Power DPDT Switch with Logic Control

CXG1188UR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:LCC12,.08SQ,20
Reach Compliance Code:unknown风险等级:5.84
1dB压缩点:35 dBm其他特性:CMOS COMPATIBLE
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):35.05 dBm最大插入损耗:0.7 dB
最小隔离度:14 dBJESD-609代码:e6/e4
安装特点:SURFACE MOUNT功能数量:1
端子数量:12最大工作频率:1900 MHz
最小工作频率:900 MHz最高工作温度:85 °C
最低工作温度:-35 °C封装主体材料:PLASTIC/EPOXY
封装等效代码:LCC12,.08SQ,20电源:3 V
射频/微波设备类型:DPDT子类别:RF/Microwave Switches
表面贴装:YES技术:GAAS
端子面层:TIN BISMUTH/PALLADIUM最大电压驻波比:1.2
Base Number Matches:1

CXG1188UR 数据手册

 浏览型号CXG1188UR的Datasheet PDF文件第2页浏览型号CXG1188UR的Datasheet PDF文件第3页浏览型号CXG1188UR的Datasheet PDF文件第4页 
High Power DPDT Switch with Logic Control  
CXG1188UR  
Description  
The CXG1188UR can be used in wireless communication systems, for example, CDMA handsets with GPS.  
The IC has on-chip logic for operation with 1 CMOS control input.  
The Sony J-FET process is used for low insertion loss and on-chip logic circuit.  
(Applications: Dual-band cellular handsets, CDMA with GPS, dual-band CDMA)  
Features  
‹ Low insertion loss: 0.30dB@900MHz, 0.45dB@1900MHz  
‹ High linearity: IIP3 = 65dBm (Typ.)  
‹ 1 CMOS compatible control line  
Package  
Small package size: 12-pin UQFN  
Structure  
GaAs J-FET MMIC  
Absolute Maximum Ratings  
(Ta = 25°C)  
Š Bias voltage  
VDD  
Vctl  
7
5
V
V
Š Control voltage  
Š Operation temperature Topr  
Š Storage temperature  
–35 to +85  
°C  
Tstg –65 to +150 °C  
This IC is ESD sensitive device. Special handling precautions are required.  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license  
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating  
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
E05465-PS  
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