Datasheet > CUHS20S30

CUHS20S30

更新时间： 2024-01-14 14:45:31

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
5页	205K
描述
Rectifier Diode

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中文翻译

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技术参数
数据手册

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CUHS20S30 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.74	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

CUHS20S30 数据手册

CUHS20S30

Schottky Barrier Diode Silicon Epitaxial

CUHS20S30

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Cathode

2: Anode

US2H

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Symbol

Note

Rating

Unit

Reverse voltage

Average rectified current

Non-repetitive peak forward surge current

Junction temperature

(Note 1)

(Note 2)

IFSM

150



Storage temperature

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on an FR4 board.

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)

Note 2: Measured with a 10 ms pulse.

Start of commercial production

2018-10

Toshiba Electronic Devices & Storage Corporation

2018-10-30

Rev.1.0

12 3 4 5

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