Datasheet > CUHZ5V6

CUHZ5V6

更新时间： 2023-12-20 18:44:41

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
16页	2754K
描述
5.6 V Zener Diode, SOD-323HE(US2H)

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中文翻译

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CUHZ5V6 数据手册

CUHZ Series

TOSHIBA Zener Diode Silicon Epitaxial Planar Type

CUHZ Series

Applications

Voltage surge protection

Features

• Small package

• The typical voltage of V is accorded to E24 series

Packaging and Internal Circuit

1: Cathode

2: Anode

US2H

Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Power dissipation

1200

500

°C

Junction temperature

Storage temperature

150

−55 to 150

°C

stg

Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25°C)

Electrostatic discharge voltage

Type No.

Peak pulse

Type No.

Peak pulse

power

current

power

current

Contact

Air

Contact

Air

(kV)

(W)

(A)

(kV)

(W)

(A)

ESD

CUHZ5V6

CUHZ6V2

CUHZ6V8

CUHZ8V2

CUHZ12V

± 30

1750

1800

1900

2100

CUHZ16V

CUHZ20V

CUHZ24V

CUHZ30V

CUHZ36V

± 30

2100

± 30

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept

and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*1: Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm

*2:

*3:

*4:

Mounted on a glass epoxy circuit board of 25.4 mm × 25.4 mm × 1.6 mm, pad dimensions of 4 mm × 4 mm.

according to IEC61000-4-2

according to IEC61000-4-5, tp = 8 / 20 μs

Start of commercial production

2021-04

2021-09-17

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...16

中文翻译

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