Datasheet > CSD06H65

CSD06H65

更新时间： 2024-11-14 14:53:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	1921K
描述
TO-220-2L

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中文翻译

获取价格

数据手册

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CSD06H65 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGYCO., LTD

TO-220-2L Plastic-Encapsulate Diode

CSD06H65 Silicon Carbide Schottky Diode

TO-220-2L

MAIN CHARACTERISTICS

I_O

6A(T_C≤150℃)

650V

V_RRM

T_j

175℃

1.35V (@T_j=25℃)

1.8V (@T_j=175℃)

V_F(typ)

FEATURES

1. CATHODE

2. ANODE



Zero Reverse Recovery Current

Zero Forward Recovery Voltage

Temperature-independent performance

High-speed switching

Low switching loss

Low Leakage Current

Application



Industrial Power Supplies

Power factorcorrection

Motor drive traction

EV charging station

Solar Inverters

MARKING

CSD06H65 = Device code

Solid dot = Green molding compound device

if none, the normal device

XXXX = Code

CSD

0 6 H65

XXXX

MAXIMUM RATINGS ( T_j=25 unless otherwise noted )

℃

Value

Symbol

Parameter

Peak repetitive reverse voltage

Unit

V_RRM

V_RWM

V_R

Working peak reverse voltage

DC blocking voltage

650

T_C≤25℃

T_C≤100℃

AverageForwardCurrent

I_F(AV)

T_C≤150℃

Non-Repetitive peak forward surge current (

I_FSM

∫i²dt

P_D

10ms half sine wave)

A²s

(t =10ms)

i t value

Powerdissipation

R_ΘJC

Thermal Resistance From Junction to Case

Junction temperature

2.28

℃/W

℃

-55~175

T_stg

Storage temperature

℃

www.jscj-elec.com

Rev - 1.0

12 3 4 5

中文翻译

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