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CSA715 PDF预览

CSA715

更新时间: 2024-11-10 03:26:59
品牌 Logo 应用领域
CDIL 晶体小信号双极晶体管放大器局域网
页数 文件大小 规格书
3页 67K
描述
PNP PLASTIC POWER TRANSISTOR

CSA715 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:SIP
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.75
外壳连接:ISOLATED最大集电极电流 (IC):2.5 A
集电极-发射极最大电压:35 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):160 MHzBase Number Matches:1

CSA715 数据手册

 浏览型号CSA715的Datasheet PDF文件第2页浏览型号CSA715的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
CSA715  
TO-126 (SOT-32) Plastic Package  
CSA715  
PNP PLASTIC POWER TRANSISTOR  
Complementary to CSC1162  
Low frequency Power Amplifier  
PIN
1. E
2. C
3. B
1
3
ALL DIMENSIONS IN MM  
ABSOLUTE MAXIMUM RATINGS  
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Collector current  
V
V
max.  
max.  
max.  
max.  
max.  
35 V  
35 V  
2.5 A  
10 W  
150 °C  
CBO  
CEO  
I
C
Total power dissipation up to T = 25°C  
P
C
tot  
Junction temperature  
T
j
Collector-emitter saturation voltage  
I
C
= 2 A; I = 0.2 A  
V
CEsat  
max.  
1.0 V  
B
D.C. current gain  
I
C
= 0.5 A; V  
= 2 V  
h
FE  
min.  
60  
CE  
max.  
320  
RATINGS (at T =25°C unless otherwise specified)  
A
Limiting values  
Collector-base voltage (open emitter)  
Collector-emitter voltage (open base)  
Emitter-base voltage (open collector)  
Collector current  
V
V
V
max.  
max.  
max.  
max.  
35 V  
35 V  
5.0 V  
2.5 A  
CBO  
CEO  
EBO  
I
C
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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