CSA708R

更新时间： 2024-11-09 23:43:59

品牌	Logo	应用领域
CDIL		晶体晶体管
页数	文件大小	规格书
3页	62K
描述
TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| TO-92

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中文翻译

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数据手册

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CSA708R 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS

CSC1008 NPN

CSA708 PNP

TO-92

CBE

Low Frequency Amplifier.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter -Base Voltage

Collector Current

Collector Dissipation

Operating And Storage Junction

Temperature Range

8.0

700

800

deg C

Tj, Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

CSC1008 CSA708

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter-Base Voltage

Collector-Cut off Current

Emitter-Cut off Current

DC Current Gain

VCBO

VCEO

VEBO

ICBO

IEBO

hFE*

IC=100uA.IE=0

IC=10mA,IB=0

IE=100uA, IC=0

VCB=60V, IE=0

VEB=5V, IC=0

IC=50mA,VCE=2V

>80

>60

>80

>60

>8.0

<100

40-400

<0.4

<100

40-240

<0.7

Collector Emitter Saturation Voltage VCE(Sat)* IC=500mA,IB=50mA

Base Emitter Saturation Voltage

VBE(Sat) * IC=500mA,IB=50mA

<1.1

DYNAMIC CHARACTERISTICS

Transition Frequency

Out-Put Capacitance

Cob

IC=50mA, VCE=10V

VCB=10V, IE=0

f=1MHz

>30

typ8

typ50

typ13

MHz

*hFE CLASSIFICATION

CSC1008 R : 40 - 80

CSA708 R : 40 - 80

O : 70 -140

Y : 120-240

G : 200-400

*Pulse Test: PW=350us, Duty Cycle=2%

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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