Datasheet > CSA1362Y

CSA1362Y

更新时间： 2024-11-04 23:43:59

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其他 - ETC		/
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中文翻译

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数据手册

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CSA1362Y 数据手册

IS / IECQC 700000

IS / IECQC 750100

IS/ISO 9002

Lic# QSC/L- 000019.2

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

SOT-23 Formed SMD Package

CSA1362

LOW FREQUENCY POWER AMPLIFIER TRANSISTOR

P–N–P transistor

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Marking

CSA1362GR = 62

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

Emitter–base voltage (open collector)

Collector current (d.c.)

–V

max.

max

CBO

CEO

EBO

–I

800 mA

200 mW

150 ° C

Total power dissipation at T

Junction temperature

D.C. current gain

= 25°C

amb

tot

max.

–I = 100 mA; –V

C CE

= 1 V

min.

max.

120

400

RATINGS (at T = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

Collector–emitter voltage (open base)

Emitter–base voltage (open collector)

Collector current (d.c.)

–V

max.

max

CBO

CEO

EBO

–I

800 mA

200 mW

Total power dissipation at T

= 25°C

tot

amb

Continental Device India Limited

Data Sheet

Page 1 of 3

12 3

中文翻译

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