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CSA1943FO

更新时间: 2024-11-08 23:13:35
品牌 Logo 应用领域
CDIL 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 43K
描述
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

CSA1943FO 技术参数

是否Rohs认证:符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:compliant
风险等级:5.61Is Samacsys:N
最大集电极电流 (IC):12 A配置:DARLINGTON
最小直流电流增益 (hFE):80最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):90 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

CSA1943FO 数据手册

 浏览型号CSA1943FO的Datasheet PDF文件第2页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR  
CSA1943F  
TO-3P  
POWER AMPLIFIER APPLICATIONS.  
Complementary CSC5200F  
MAXIMUM RATINGS(Ta=25 deg C)  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
160  
160  
5.0  
12  
UNIT  
V
V
V
A
Collector -Base Voltage  
Collector -Emitter Voltage  
Emitter -Base Voltage  
Collector Current  
Base Current  
IB  
1.2  
A
Power Dissipation @ Tc=25 deg C  
Operating And Storage Junction  
Temperature Range  
PC  
Tj, Tstg  
90  
W
deg C  
-55 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
ICBO VCB=160V, IE=0  
MIN  
-
-
160  
55  
35  
-
-
-
-
TYP  
-
-
-
-
-
-
MAX  
UNIT  
uA  
uA  
Collector-Cuttoff Current  
Emitter-Cuttoff Current  
Collector -Emitter Voltage  
DC Current Gain  
5.0  
5.0  
-
160  
-
3.0  
1.5  
-
IEBO  
VEB=5V, IC=0  
VCEO IC=50mA, IB=0  
V
hFE  
IC=1A,VCE=5V  
IC=7A,VCE=5V  
Collector Emitter Saturation Voltage  
Base Emitter on Voltage  
Transition Frequency  
VCE(Sat) IC=8A, IB=0.8A  
VBE(on) IC=7A,VCE=5V  
V
V
MHz  
pF  
-
ft  
Cob  
VCE=5V, IC=1A  
VCB=10V, IE=0  
f=1MHz  
30  
360  
Collector Output Capacitance  
-
*hFE Classification  
:
R : 55-110,  
O : 80-160  
Continental Device India Limited  
Page 1 of 2  
Data Sheet  

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