Datasheet > CS7N60A3R

CS7N60A3R

更新时间： 2024-11-19 17:00:55

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	279K
描述
TO-251

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CS7N60A3R 数据手册

Silicon N-Channel Power MOSFET

○

CS7N60 A3R

General Description：

V_DSS

600

CS7N60 A3R, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-251, which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

100

1.0

Ω

l Fast Switching

l Low ON Resistance(Rdson≤1.3Ω)

l Low Gate Charge (Typical Data:24nC)

l Low Reverse transfer capacitances(Typical:5.5pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

4.4

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

400

V/ns

E_AS

5.0

dv/dt

100

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

0.8

150，–55 to 150

300

W/℃

℃

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2015V01

12 3 4 5 6 7...10

中文翻译

下载PDF

与CS7N60A3R相关器件

型号	品牌	获取价格	描述	数据表
CS7N60A4R	CRMICRO	获取价格	TO-252
CS7N60A8R	CRMICRO	获取价格	TO-220
CS7N60FA9R	CRMICRO	获取价格	TO-220F
CS7N65A	YFW	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CS7N65A0D	CRMICRO	获取价格	TO-263
CS7N65A0R	CRMICRO	获取价格	TO-263
CS7N65A1	YFW	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CS7N65A2	YFW	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CS7N65A3	YFW	获取价格	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
CS7N65A3R	CRMICRO	获取价格	TO-251