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CS7N80F A9RZ-G PDF预览

CS7N80F A9RZ-G

更新时间: 2024-11-19 18:09:59
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 695K
描述
TO-220F

CS7N80F A9RZ-G 数据手册

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Silicon N-Channel Power MOSFET  
CS7N80F A9RZ-G  
R
General Description  
VDSS  
800  
V
A
CS7N80F A9RZ-G, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-220F, which accords with the RoHS standard.  
Features  
ID  
7
PD(TC=25)  
RDS(ON)Typ  
33  
1.5  
W
Fast Switching  
Low ON Resistance(Rdson1.8)  
Low Gate Charge (Typical Data: 33.9nC)  
Low Reverse transfer capacitances(Typical:11.2pF)  
100% Single Pulse avalanche energy Test  
Halogen Free  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
800  
V
A
7
Continuous Drain Current Tc= 25℃  
ID  
Continuous Drain Current TC = 100 °C  
4.2  
A
a1  
28  
Pulsed Drain Current Tc= 25℃  
Gate-to-Source Voltage  
A
IDM  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
466  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
33  
0.26  
Power Dissipation Tc= 25℃  
PD  
Derating Factor above 25°C  
W/℃  
Operating Junction and Storage Temperature Range  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2023V01  

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