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CS7N60A4R PDF预览

CS7N60A4R

更新时间: 2024-09-26 17:01:47
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 336K
描述
TO-252

CS7N60A4R 数据手册

 浏览型号CS7N60A4R的Datasheet PDF文件第2页浏览型号CS7N60A4R的Datasheet PDF文件第3页浏览型号CS7N60A4R的Datasheet PDF文件第4页浏览型号CS7N60A4R的Datasheet PDF文件第5页浏览型号CS7N60A4R的Datasheet PDF文件第6页浏览型号CS7N60A4R的Datasheet PDF文件第7页 
Silicon N-Channel Power MOSFET  
R
CS7N60 A4R  
General Description  
VDSS  
600  
V
A
CS7N60 A4R, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by the self-aligned planar Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
miniaturization and higher efficiency. The package form is  
TO-252, which accords with the RoHS standard.  
Features  
ID  
7
PD(TC=25)  
RDS(ON)Typ  
100  
1.0  
W
l Fast Switching  
l Low ON Resistance(Rdson1.3)  
l Low Gate Charge (Typical Data:24nC)  
l Low Reverse transfer capacitances(Typical:5.5pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
600  
V
A
Continuous Drain Current TC = 25 °C  
Continuous Drain Current TC = 100 °C  
Pulsed Drain Current TC = 25 °C  
Gate-to-Source Voltage  
7
ID  
4.4  
A
a1  
28  
A
IDM  
VGS  
V
±30  
a2  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
400  
mJ  
V/ns  
W
EAS  
a3  
5.0  
dv/dt  
Power Dissipation TC = 25 °C  
Derating Factor above 25°C  
100  
0.8  
PD  
W/℃  
Operating Junction and Storage Temperature Range  
TJTstg  
15055 to 150  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2019V01  

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