CS730 A3RD
R
○
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min
.
Typ.
Max.
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
V
VDSS
400
--
--
0.55
--
--
--
ID=250uA,Reference25℃
V/℃
ΔBVDSS/ΔTJ
VDS = 400V, VGS= 0V,
Ta = 25℃
VDS =320V, VGS= 0V,
Ta = 125℃
--
1
Drain to Source Leakage Current
µA
IDSS
100
10
-10
VDS =0V, VGS= 20V
VDS =0V, VGS =-20V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
µA
µA
IGSS(F)
IGSS(R)
--
--
--
--
ON Characteristics
Rating
Symbol
Parameter
Test Conditions
Units
Min.
--
Typ. Max.
VGS=10V,ID=3.0A
Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
0.75
--
1
Ω
VDS = VGS, ID = 250µA
2.0
4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Rating
Typ.
4.5
Parameter
Test Conditions
Symbol
Units
S
Min.
--
Max.
VDS=15 ID =3.0A
Forward Trans conductance
Input Capacitance
gfs
--
Ciss
Coss
Crss
--
540
68
VGS = 0V VDS = 25V
f = 1.0MHz
Output Capacitance
--
pF
Reverse Transfer Capacitance
--
7.5
Resistive Switching Characteristics
Rating
Typ.
9
Parameter
Test Conditions
Symbol
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
td(ON)
tr
td(OFF)
tf
--
11
--
ID =6.0A VDD = 200V
RG = 9.1Ω
Turn-Off Delay Time
Fall Time
--
29
--
--
16
--
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
14.5
3
ID =6.0A VDD =200V
VGS = 10V
Qgs
Qgd
--
nC
--
6.5
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2015V01