Datasheet > CS730A8RD

CS730A8RD

更新时间： 2024-11-21 17:01:55

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	187K
描述
TO-220

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CS730A8RD 数据手册

Silicon N-Channel Power MOSFET

○

CS730 A8RD

General Description：

V_DSS

400

I_D

CS730 A8RD, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar

Technology which reduce the conduction loss, improve

switching performance and enhance the avalanche energy. The

transistor can be used in various power switching circuit for

system miniaturization and higher efficiency. The package form

is TO-220AB, which accords with the RoHS standard.

Features：

P_D(T_C=25℃)

R_DS(ON)Typ

Ω

0.75

l Fast Switching

l ESD Improved Capability

l Low Gate Charge (Typical Data:14.5nC)

l Low Reverse transfer capacitances(Typical:7.5pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of electron ballast and adaptor.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

400

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

4.2

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

200

E_AS

E_AR

2.3

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

P_D

Derating Factor above 25°C

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

0.60

3000

W/℃

V_ESD(G-S)

T_J，T_stg

T_L

150，–55 to 150

300

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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