Datasheet > CS5N60A4H

CS5N60A4H

更新时间： 2024-03-03 10:11:01

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	306K
描述
TO-252

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数据手册

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CS5N60A4H 数据手册

CS5N60 A4H

○

1.15

1.1

1.05

0.95

0.9

0.85

0.8

0.95

VGS=0V

ID=250μA

0.75

0.7

VGS=0V

ID=250μA

0.9

0.65

-55 -30

-5

120 145 170

-75 -50 -25

25 50 75 100 125 150 175

Tj, Junction temperature , C

Figure 11 Typical Theshold Voltage vs Junction Temperature

Tj, Junction temperature , C

Figure 12 Typical Breakdown Voltage vs Junction Temperature

10000

VDS=150V

VDS=300V

Ciss

1000

100

VDS=400V

Coss

V_GS=0V , f=1MHz

Ciss=Cgs+Cgd

Coss=Cds+Cgd

Crss=Cgd

Crss

I_D=5A

0.1

100

10 12 14 16 18 20

Vds , Drain - Source Voltage , Volts

Qg , Total Gate Charge , nC

Figure 13 Typical Capacitance vs Drain to Source Voltage

Figure 14 Typical Gate Charge vs Gate to Source Voltage

100

STARTING Tj = 25℃

STARTING Tj = 150℃

+150℃

+25℃

-55℃

If R=0: t_AV=(L* I_AS) / (1.38V_DSS-V_DD

)

If R≠0: t_AV=(L/R) In[IAS*R/ (1.38V_DSS-V_DD)+1]

R equals total Series resistance of Drain circuit

0.1

1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01

tav,Time in Avalanche,Seconds

1.00E+00

0.2

0.4

0.6

0.8

1.2

Vsd , Source - Drain Voltage , Volts

Figure 16 Unclamped Inductive Switching Capability

2015V01

Figure 15 Typical Body Diode Transfer Characteristics

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 6 of 10

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