CS55BZPBFREE

更新时间： 2024-02-08 06:35:26

品牌	Logo	应用领域
CENTRAL		栅极触发装置可控硅整流器
页数	文件大小	规格书
2页	126K
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数据手册

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CS55BZPBFREE 数据手册

DATA SHEET

CS55B

CS55D

SILICON CONTROLLED RECTIFIER

0.8 AMPS, 200 AND 400 VOLTS

TO-92 CASE

DESCRIPTION

The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed

for applications requiring a low gate sensitivity.

MAXIMUM RATINGS (T =25°C unless otherwise noted)

SYMBOL

CS55B

200

CS55D

400

UNITS

Peak Repetitive Off-State Voltage

DRM RRM

RMS On-State Current (T =60 C)

0.8

T(RMS)

Peak One Cycle Surge (t=10ms)

TSM

I t Value for Fusing (t=10ms)

I t

0.24

2.0

A s

Peak Gate Power (tp=10µs)

Average Gate Power Dissipation

Peak Gate Current (tp=10µs)

Peak Gate Voltage (tp=10µs)

Storage Temperature

0.1

1.0

G(AV)

8.0

-40 to +125

200

°C

stg

Junction Temperature

°C

Thermal Resistance

°C/W

Thermal Resistance

100

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

100

MAX

1.00

UNITS

Rated V

, R =1KΩ

DRM RRM GK

µA

DRM RRM

DRM RRM GK

,V , R =1KΩ, T =125°C

µA

DRM RRM

V =12V

200

5.00

0.8

µA

=1KΩ

V =12V

=1.0A

1.70

dv/dt

V =.67 x V

, R =1KΩ, T =125°C

DRM GK

V/µs

(SEE REVERSE SIDE)

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