DATA SHEET
CS55B
CS55D
SILICON CONTROLLED RECTIFIER
0.8 AMPS, 200 AND 400 VOLTS
TO-92 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR CS55B series type are epoxy molded silicon controlled rectifiers designed
for applications requiring a low gate sensitivity.
MAXIMUM RATINGS (T =25°C unless otherwise noted)
A
SYMBOL
CS55B
200
CS55D
400
UNITS
Peak Repetitive Off-State Voltage
V
,V
V
DRM RRM
o
RMS On-State Current (T =60 C)
C
I
0.8
10
A
A
T(RMS)
Peak One Cycle Surge (t=10ms)
I
TSM
2
2
2
I t Value for Fusing (t=10ms)
I t
0.24
2.0
A s
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Storage Temperature
P
W
GM
P
0.1
1.0
W
G(AV)
I
A
GM
V
8.0
V
GM
T
T
-40 to +125
-40 to +125
200
°C
stg
J
Junction Temperature
°C
Thermal Resistance
Θ
Θ
°C/W
°C/W
JA
JC
Thermal Resistance
100
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
100
MAX
1.00
UNITS
I
I
I
I
,I
Rated V
Rated V
,V
, R =1KΩ
DRM RRM GK
µA
DRM RRM
DRM RRM GK
,I
,V , R =1KΩ, T =125°C
µA
DRM RRM
C
V =12V
200
5.00
0.8
µA
mA
V
GT
H
D
R
=1KΩ
GK
V
V
V =12V
GT
D
I
=1.0A
1.70
V
TM
TM
dv/dt
V =.67 x V
, R =1KΩ, T =125°C
DRM GK
25
V/µs
D
C
(SEE REVERSE SIDE)
R1