Datasheet > CS4N80FA9HD

CS4N80FA9HD

更新时间： 2024-10-31 17:01:31

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	380K
描述
TO-220F

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数据手册

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CS4N80FA9HD 数据手册

Silicon N-Channel Power MOSFET

CS4N80F A9HD

○

General Description：

V_DSS

800

CS4N80F A9HD, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-220F, which accords with the RoHS standard.

Features：

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

2.2

Ω

l Fast Switching

l ESD Improved Capability

l Low Gate Charge (Typical Data: 25nC)

l Low Reverse transfer capacitances(Typical:7.5pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

800

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

2.5

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

230

V/ns

E_AS

5.0

dv/dt

Power Dissipation

0.28

P_D

Derating Factor above 25°C

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

4000

V_ESD(G-S)

T_J，T_stg

T_L

150，–55 to 150

300

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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