Datasheet > CS4R60A4RDP-G

CS4R60A4RDP-G

更新时间： 2024-04-09 19:01:26

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描述
TO-252

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CS4R60A4RDP-G 数据手册

Silicon N-Channel Power MOSFET

CS4R60 A4RDP-G

○

General Description：

V_DSS

600

CS4R60 A4RDP-G, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-252,

which accords with the RoHS standard.

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

2.5

Ω

Features：

 Fast Switching

 Low ON Resistance(Rdson≤3.0Ω)

 Low Gate Charge (Typical Data:15.3nC)

 Low Reverse transfer capacitances(Typical: 2.7pF)

 100% Single Pulse avalanche energy Test

 Halogen Free

Applications：

Motor driver.

Absolute（Tj= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current T_C= 25 °C

Gate-to-Source Voltage

I_D

2.4

I_DM

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

172

V/ns

E_AS

5.0

dv/dt

Power Dissipation T_C= 25 °C

0.46

P_D

Derating Factor above 25°C

W/℃

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

Operating Junction and Storage Temperature Range

3000

V_ESD(G-S)

T_J，T_stg

150，–55 to 150

℃

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