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CS220-16NPBFREE PDF预览

CS220-16NPBFREE

更新时间: 2024-01-15 07:17:27
品牌 Logo 应用领域
CENTRAL 可控硅
页数 文件大小 规格书
2页 69K
描述
Silicon Controlled Rectifier,

CS220-16NPBFREE 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.82触发设备类型:SCR

CS220-16NPBFREE 数据手册

 浏览型号CS220-16NPBFREE的Datasheet PDF文件第2页 
TM  
CS220-16B  
CS220-16D  
CS220-16M  
CS220-16N  
Central  
Semiconductor Corp.  
SILICON CONTROLLED RECTIFIER  
16 AMP, 200 THRU 800 VOLTS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CS220-16B  
series type is an Epoxy Molded Silicon Controlled  
Rectifier designed for sensing circuit applications  
and control systems.  
MARKING CODE: FULL PART NUMBER  
TO-220 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
C
SYMBOL  
CS220 CS220 CS220 CS220  
-16B  
-16D  
-16M  
-16N  
UNITS  
V
A
A
A2s  
W
W
A
V
V
A/µs  
°C  
°C  
°C/W  
°C/W  
Peak Repetitive Off-State Voltage  
V
V
200  
400  
600  
800  
DRM, RRM  
RMS On-State Current (T =90°C)  
I
I
16  
160  
128  
40  
1.0  
4.0  
16  
C
T(RMS)  
TSM  
Peak One Cycle Surge (t=10ms)  
I2t Value for Fusing (t=10ms)  
Peak Gate Power (tp=10µs)  
Average Gate Power Dissipation  
Peak Forward Gate Current (tp=10µs)  
Peak Forward Gate Voltage (tp=10µs)  
Peak Reverse Gate Voltage (tp=10µs)  
Critical Rate of Rise of On-State Current  
Storage Temperature  
I2t  
P
P
I
V
V
di/dt  
GM  
G (AV)  
FGM  
FGM  
RGM  
5.0  
100  
-40 to +150  
-40 to +125  
60  
T
T
Θ
Θ
stg  
J
JA  
JC  
Junction Temperature  
Thermal Resistance  
Thermal Resistance  
2.0  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
10  
2.0  
15  
20  
UNITS  
µA  
mA  
mA  
mA  
V
I
I
I
I
V
V
I
I
Rated V  
Rated V  
V
DRM, RRM  
DRM, RRM  
, V  
, T =125°C  
DRM, RRM  
DRM RRM  
C
V =12V, R =10Ω  
3.4  
8.8  
0.64  
1.40  
GT  
H
GT  
TM  
D
L
I =100mA  
T
V =12V, R =10Ω  
1.50  
1.60  
D
L
I
=32A, tp=380µs  
2
V
V/µs  
TM  
dv/dt  
V = / V  
, T =125°C  
500  
3
D
DRM  
C
R2 (14-April 2004)  

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