Datasheet > CS220-25N

CS220-25N

更新时间： 2024-01-16 05:18:50

品牌	Logo	应用领域
CENTRAL		可控硅
页数	文件大小	规格书
2页	68K
描述
SILICON CONTROLLED RECTIFIER 25 AMP, 200 THRU 800 VOLTS

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中文翻译

获取价格

技术参数
数据手册

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CS220-25N 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	not_compliant
风险等级：	5.7	JESD-609代码：	e0
峰值回流温度（摄氏度）：	NOT SPECIFIED	端子面层：	Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	触发设备类型：	SCR
Base Number Matches：	1

CS220-25N 数据手册

CS220-25B

CS220-25D

CS220-25M

CS220-25N

Central

Semiconductor Corp.

SILICON CONTROLLED RECTIFIER

25 AMP, 200 THRU 800 VOLTS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CS220-25B

series type is an Epoxy Molded Silicon Controlled

Rectifier designed for sensing circuit applications

and control systems.

MARKING CODE: FULL PART NUMBER

TO-220 CASE

MAXIMUM RATINGS: (T =25°C unless otherwise noted)

SYMBOL

CS220 CS220 CS220 CS220

-25B

-25D

-25M

-25N

UNITS

A²s

A/µs

°C

°C/W

Peak Repetitive Off-State Voltage

200

400

600

800

DRM, RRM

RMS On-State Current (T =90°C)

250

310

1.0

4.0

T(RMS)

TSM

Peak One Cycle Surge (t=10ms)

I²t Value for Fusing (t=10ms)

Peak Gate Power (tp=10µs)

Average Gate Power Dissipation

Peak Forward Gate Current (tp=10µs)

Peak Forward Gate Voltage (tp=10µs)

Peak Reverse Gate Voltage (tp=10µs)

Critical Rate of Rise of On-State Current

Storage Temperature

I²t

di/dt

G (AV)

FGM

RGM

5.0

100

-40 to +150

-40 to +125

stg

Junction Temperature

Thermal Resistance

1.3

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

4.0

UNITS

µA

Rated V

DRM, RRM

, V

, T =125°C

DRM, RRM

DRM RRM

V =12V, R =10Ω

4.2

12.5

0.65

I =100mA

V =12V, R =10Ω

1.50

1.80

=50A, tp=380µs

V/µs

dv/dt

V = / V

, T =125°C

200

DRM

R1 (14-April 2004)

中文翻译

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