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CS220-12BLEADFREE PDF预览

CS220-12BLEADFREE

更新时间: 2024-09-26 19:16:03
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页数 文件大小 规格书
2页 363K
描述
Silicon Controlled Rectifier, 12A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-220AB, PLASTIC, TO-220, 3 PIN

CS220-12BLEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.30.00.80风险等级:5.63
外壳连接:ANODE配置:SINGLE
最大直流栅极触发电流:15 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大均方根通态电流:12 A
断态重复峰值电压:200 V重复峰值反向电压:200 V
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10触发设备类型:SCR
Base Number Matches:1

CS220-12BLEADFREE 数据手册

 浏览型号CS220-12BLEADFREE的Datasheet PDF文件第2页 
CS220-12B  
CS220-12D  
CS220-12M  
CS220-12N  
www.centralsemi.com  
DESCRIPTION:  
SILICON CONTROLLED RECTIFIERS  
12 AMP, 200 THRU 800 VOLT  
The CENTRAL SEMICONDUCTOR CS220-12B series  
types are epoxy molded SCRs designed for sensing  
circuit and control system applications.  
MARKING: FULL PART NUMBER  
TO-220 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
CS220  
C
SYMBOL  
-12B  
200  
-12D  
400  
-12M  
600  
-12N  
800  
UNITS  
V
Peak Repetitive Off-State Voltage  
V
, V  
DRM RRM  
RMS On-State Current (T =90°C)  
C
Peak One Cycle Surge Current, t=10ms  
I2t Value for Fusing, t=10ms  
I
12  
80  
A
A
A2s  
T(RMS)  
I
TSM  
I2t  
32  
Peak Gate Power Dissipation, tp=10μs  
Average Gate Power Dissipation  
Peak Forward Gate Current, tp=10μs  
Peak Forward Gate Voltage, tp=10μs  
Peak Reverse Gate Voltage, tp=10μs  
Critical Rate of Rise of On-State Current  
Operating Junction Temperature  
Storage Temperature  
P
40  
W
GM  
P
1.0  
4.0  
16  
W
G(AV)  
I
A
FGM  
V
V
FGM  
V
5.0  
100  
V
RGM  
di/dt  
A/μs  
°C  
T
-40 to +125  
-40 to +150  
60  
J
T
°C  
stg  
Thermal Resistance  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
2.5  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
, I  
Rated V  
, V  
10  
ꢀA  
DRM RRM  
DRM RRM  
, I  
Rated V , V  
DRM RRM  
, T =125°C  
3.0  
15  
mA  
mA  
mA  
V
DRM RRM  
C
V =12V, R =10Ω  
3.5  
8.7  
GT  
H
D
L
I =100mA  
20  
T
V
V =12V, R =10Ω  
0.64  
1.21  
1.5  
1.6  
D
L
GT  
TM  
V
I
=24A, tp=380μs  
V
TM  
dv/dt  
V =⅔Rated V  
, T =125°C  
200  
V/ꢀs  
D
DRM  
C
R5 (24-October 2013)  

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