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CS220-12P PDF预览

CS220-12P

更新时间: 2024-02-16 12:08:47
品牌 Logo 应用领域
CENTRAL 可控硅
页数 文件大小 规格书
2页 86K
描述
SILICON CONTROLLED RECTIFIER 12 AMP, 200 THRU 1000 VOLTS

CS220-12P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.89JESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:NOT SPECIFIED

CS220-12P 数据手册

 浏览型号CS220-12P的Datasheet PDF文件第2页 
CS220-12B  
CS220-12D  
CS220-12M  
CS220-12N  
CS220-12P  
145 Adams Avenue, Hauppauge, NY 11788 USA  
Tel: (631) 435-1110 • Fax: (631) 435-1824  
SILICON CONTROLLED RECTIFIER  
12 AMP, 200 THRU 1000 VOLTS  
JEDEC TO-220AB CASE  
DESCRIPTION  
The CENTRAL SEMICONDUCTOR CS220-12B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit  
applications and control systems.  
MAXIMUM RATINGS (T = 25oC unless otherwise noted)  
C
CS220  
-12B  
CS220  
-12D  
CS220  
-12M  
CS220  
-12N  
CS220 UNITS  
-12P  
SYMBOL  
Peak Repetitive Off-State Voltage  
V
, V  
DRM RRM  
200  
400  
600  
800  
1000  
V
A
A
RMS On-State Current (T = 90oC)  
I
12  
C
T(RMS)  
Peak One Cycle Surge (t = 10ms)  
I
120  
TSM  
2
2
2
I t Value for Fusing (t = 10ms)  
I t  
72  
A s  
Peak Gate Power (tp = 10µs)  
Average Gate Power Dissipation  
Peak Forward Gate Current (tp = 10µs)  
Peak Forward Gate Voltage (tp =10µs)  
Peak Reverse Gate Voltage (tp =10µs)  
Critical Rate of Rise of On-State Current  
Storage Temperature  
P
P
40  
W
W
GM  
1.0  
G(AV)  
FGM  
I
4.0  
16  
A
V
V
FGM  
RGM  
V
5.0  
V
di/dt  
100  
A/µs  
oC  
T
-40 to +150  
-40 to +125  
60  
stg  
Junction Temperature  
T
J
Θ
oC  
Thermal Resistance  
oC/W  
oC/W  
J-A  
Thermal Resistance  
Θ
2.5  
J-C  
ELECTRICAL CHARACTERISTICS (T = 25oC unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
I
, I  
Rated V  
Rated V  
, V  
0.01  
3.00  
15  
mA  
mA  
mA  
mA  
V
DRM RRM  
DRM RRM  
, I  
, V  
, T = 125oC  
C
DRM RRM  
DRM RRM  
V
= 12V, R = 33Ω  
GT  
H
D
L
I
= 100mA  
30  
T
V
V
V
= 12V, R = 33Ω  
1.50  
1.60  
GT  
TM  
D
L
I
= 24A, tp = 10ms  
V
TM  
dv/dt  
V
= .67 x V  
DRM  
, T = 125oC  
200  
V/µs  
D
C
R2 ( 30-November 2001)  

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