Datasheet > CS1N15ASFD

CS1N15ASFD

更新时间： 2024-11-29 15:19:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	844K
描述
SOT-23

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数据手册

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CS1N15ASFD 数据手册

Silicon N-Channel Power MOSFET

CS1N15ASFD-G

○

General Description

：

V_DSX

150

0.2

Ω

CS1N15ASFD-G, the silicon N-channel Depletion-Mode

VDMOSFETs, is obtained by advanced planar Technology which

reduce the conduction loss, improve switching performance and

enhance the avalanche energy. The transistor can be used in various

power switching circuit for system miniaturization and higher efficiency.

The package form is SOT-23, which accords with the RoHS standard.

I_{D min}

R_DS(ON)Typ

Features

：

l ESD improved Capability

l Depletion-mode ( Normally-on)

l Fast Switching

Low On-Resistance

l Improved dv/dt capability

l Halogen free available

Applications

：

Power switch circuit of adaptor and charger.

Absolute

（

Ta= 25

℃ unless otherwise specified）：

Parameter

Symbol

Rating

Units

Drain-to-Source Voltage

V_DSX

I_D

150

0.2

0.8

Continuous Drain Current

Pulsed Drain Current

[1]

I_DM

Gate-to-Source Voltage

V_GS

P_D

1.2

150，–55 to 150

Power Dissipation

℃

Operating Junction and Storage Temperature Range

T_J

，

T_stg

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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