Datasheet > CS1N60C4H

CS1N60C4H

更新时间： 2024-11-29 15:19:03

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华润微 - CRMICRO		/
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描述
TO-252

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CS1N60C4H 数据手册

Silicon N-Channel Power MOSFET

○

CS1N60 C4H

General Description：

V_DSS

600

CS1N60 C4H, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is

TO-252, which accords with the RoHS standard.

Features：

I_D

1.0

P_D(T_C=25℃)

R_DS(ON)Typ

Ω

l Fast Switching

l Low ON Resistance(Rdson≤10.5Ω)

l Low Gate Charge (Typical Data:4.7nC)

l Low Reverse transfer capacitances(Typical:2.9pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current

1.0

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

0.6

4.0

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Avalanche Energy ,Repetitive

Avalanche Current

E_AS

E_AR

1.1

I_AR

Peak Diode Recovery dv/dt

Power Dissipation

5.0

V/ns

dv/dt

0.24

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

℃

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