Datasheet > CS1N60A23H

CS1N60A23H

更新时间： 2024-11-29 17:01:59

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	514K
描述
SOT-223

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CS1N60A23H 数据手册

Silicon N-Channel Power MOSFET

CS1N60 A23H

○

General Description：

V_DSS

600

CS1N60 A23H, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is SOT-223,

which accords with the RoHS standard.

I_D

0.8

P_D(T_C=25℃)

R_DS(ON)Typ

Ω

Features：

l Fast Switching

l Low ON Resistance(Rdson≤15Ω)

l Low Gate Charge (Typical Data:4nC)

l Low Reverse transfer capacitances(Typical:2.6pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（TA= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

600

Continuous Drain Current

0.8

I_D

Continuous Drain Current T_a= 100 °C

Pulsed Drain Current

0.6

3.2

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

V/ns

E_AS

dv/dt

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

0.024

W/℃

℃

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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