CS18N20 A8R
R
○
Electrical Characteristics(Tc= 25℃ unless otherwise specified):
OFF Characteristics
Rating
Typ.
--
Unit
Parameter
Test Conditions
Symbol
Min.
200
--
Max.
--
s
VGS=0V, ID=250µA
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
V
VDSS
ID=250uA,Reference25℃
0.24
--
V/℃
µA
µA
nA
ΔBVDSS/ΔTJ
VDS =200V, VGS= 0V,
Ta = 25℃
VDS =160V, VGS= 0V,
Ta = 125℃
--
--
--
--
--
1
Drain to Source Leakage Current
IDSS
--
100
100
-100
VGS =+30V
VGS =-30V
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
IGSS(F)
IGSS(R)
--
nA
--
ON Characteristics
Rating
Parameter
Test Conditions
Symbol
Units
Min.
--
Typ. Max.
VGS=10V,ID=9A
Drain-to-Source On-Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
0.12 0.18
Ω
VDS = VGS, ID = 250µA
2.0
--
4.0
V
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Rating
Typ.
Parameter
Test Conditions
Symbol
Units
S
Min.
--
Max.
--
VDS=15V, ID =9A
Forward Transconductance
Input Capacitance
gfs
8.5
Ciss
Coss
Crss
--
1136
183
--
VGS = 0V VDS = 25V
f = 1.0MHz
Output Capacitance
--
--
pF
Reverse Transfer Capacitance
--
16.4
--
Resistive Switching Characteristics
Rating
Typ.
19
Parameter
Test Conditions
Symbol
Units
ns
Min.
--
Max.
--
Turn-on Delay Time
Rise Time
td(ON)
tr
td(OFF)
tf
--
33
--
ID =18A VDD =100V
RG =10Ω
Turn-Off Delay Time
Fall Time
--
35
--
--
8
--
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
Qg
--
20.4
6.9
7.3
--
ID =18A VDD =160V
VGS = 10V
Qgs
Qgd
--
--
nC
--
--
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2016V01