5秒后页面跳转
CS18LV20483ZIR55 PDF预览

CS18LV20483ZIR55

更新时间: 2024-02-07 10:00:28
品牌 Logo 应用领域
其他 - ETC 静态存储器
页数 文件大小 规格书
16页 757K
描述
High Speec Super Low Power SRAM

CS18LV20483ZIR55 技术参数

生命周期:Contact Manufacturer包装说明:HALOGEN FREE AND ROHS COMPLIANT, DICE
Reach Compliance Code:compliant风险等级:5.7
最长访问时间:55 nsJESD-30 代码:X-XUUC-N
内存密度:2097152 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX8
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
并行/串行:PARALLEL最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子位置:UPPERBase Number Matches:1

CS18LV20483ZIR55 数据手册

 浏览型号CS18LV20483ZIR55的Datasheet PDF文件第3页浏览型号CS18LV20483ZIR55的Datasheet PDF文件第4页浏览型号CS18LV20483ZIR55的Datasheet PDF文件第5页浏览型号CS18LV20483ZIR55的Datasheet PDF文件第7页浏览型号CS18LV20483ZIR55的Datasheet PDF文件第8页浏览型号CS18LV20483ZIR55的Datasheet PDF文件第9页 
High Speed Super Low Power SRAM  
CS18LV20483  
256K-Word By 8 Bit  
DC ELECTRICAL CHARACTERISTICS ( TA = 0 to + 70oC , Vcc = 3.0V )  
Parameter  
Name  
VIL  
Parameter  
Test Conduction  
MIN TYP(1)  
MAX Unit  
Guaranteed Input Low  
Voltage (2)  
-0.5  
0.8  
V
Guaranteed Input High  
Voltage (2)  
2.0  
Vcc+0.2  
V
VIH  
Input Leakage Current VCC=MAX, VIN=0 to VCC  
-1  
-1  
1
1
uA  
uA  
IIL  
IOL  
Output Leakage  
Current  
VCC=MAX, /CE=VIN, or  
/OE=VIN , VIO=0V to VCC  
VCC=MAX, IOL = 2mA  
Output Low Voltage  
0.4  
25  
V
VOL  
Output High Voltage  
Operating Power  
Supply Current  
VCC=MIN, IOH = -1mA  
2.4  
V
VOH  
ICC  
(3)  
/CE=VIL, IDQ=0mA, F=FMAX  
mA  
Standby Supply - TTL /CE=VIH, IDQ=0mA,  
1
4
mA  
uA  
ICCSB  
ICCSB1  
/CEVCC-0.2V, VIN≧  
VCC-0.2V or VIN0.2V  
Standby Current  
-CMOS  
0.5  
1. Typical characteristics are at TA = 25oC.  
2. These are absolute values with respect to device ground and all overshoots due to system or  
tester notice are included.  
3. Fmax = 1/tRC.  
DATA RETENTION CHARACTERISTICS ( TA = 0 to + 70oC)  
Parameter Name  
Parameter  
VCC for Data Retention  
Test Conduction  
MIN TYP MAX Unit  
/CEVCC-0.2V,  
1.5  
V
VDR  
VINVCC-0.2V or VIN0.2V  
/CEVCC-0.2V, VCC=1.5V  
VINVCC-0.2V or VIN0.2V  
Data Retention Current  
0.3  
2
uA  
ns  
ns  
ICCDR  
TCDR  
Chip Deselect to Data  
Retention Time  
Operation Recovery  
Time  
0
See Retention Waveform  
tRC (1)  
tR  
1. Read Cycle Time.  
6
Rev. 1.0  
Chiplus reserves the right to change product or specification without notice.  

与CS18LV20483ZIR55相关器件

型号 品牌 描述 获取价格 数据表
CS18LV20483ZIR70 ETC High Speec Super Low Power SRAM

获取价格

CS18M CENTRAL SILICON CONTROLLED RECTIFIER

获取价格

CS18MLEADFREE CENTRAL Silicon Controlled Rectifier, 1A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-18, HERM

获取价格

CS-18MN-K FUJITSU Power/Signal Relay, SPST, Momentary, 0.025A (Coil), 18VDC (Coil), 450mW (Coil), 5A (Contac

获取价格

CS-18MT-K FUJITSU Power/Signal Relay, SPST, Momentary, 0.025A (Coil), 18VDC (Coil), 450mW (Coil), 5A (Contac

获取价格

CS18MZ CENTRAL Silicon Controlled Rectifier, 1A I(T)RMS, 1000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element

获取价格