Datasheet > CS18N20A4R

CS18N20A4R

更新时间： 2024-11-18 15:19:35

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	405K
描述
TO-252(或DPAK)

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CS18N20A4R 数据手册

Silicon N-Channel Power MOSFET

CS18N20 A4R

○

General Description：

V_DSS

200

CS18N20 A4R, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

I_D

P_D(T_C=25℃)

R_DS(ON)Typ

100

0.12

Ω

can be used in various power switching circuit for system miniaturization and higher efficiency. The package

form is TO-252, which accords with the RoHS standard.

Features：

l Fast Switching

l Low ON Resistance(Rdson≤0.18Ω)

l Low Gate Charge (Typical Data:20.4nC)

l Low Reverse transfer capacitances(Typical:16.4pF)

l 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

200

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

11.3

I_DM

Gate-to-Source Voltage

V_GS

±30

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

500

V/ns

E_AS

5.0

dv/dt

100

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

0.8

150，–55 to 150

300

W/℃

℃

T_J，T_stg

T_L

℃

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

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