Silicon N-Channel Power MOSFET
CS18N20 A4R
R
○
General Description:
VDSS
200
V
A
CS18N20 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
ID
18
PD(TC=25℃)
RDS(ON)Typ
100
0.12
W
Ω
can be used in various power switching circuit for system miniaturization and higher efficiency. The package
form is TO-252, which accords with the RoHS standard.
Features:
l Fast Switching
l Low ON Resistance(Rdson≤0.18Ω)
l Low Gate Charge (Typical Data:20.4nC)
l Low Reverse transfer capacitances(Typical:16.4pF)
l 100% Single Pulse avalanche energy Test
Applications:
Power switch circuit of adaptor and charger.
Absolute(Tc= 25℃ unless otherwise specified):
Parameter
Symbol
VDSS
Rating
Units
Drain-to-Source Voltage
200
V
A
Continuous Drain Current
18
ID
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
11.3
A
a1
72
A
IDM
Gate-to-Source Voltage
VGS
±30
V
a2
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
500
mJ
V/ns
W
EAS
a3
5.0
dv/dt
100
PD
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
0.8
150,–55 to 150
300
W/℃
℃
TJ,Tstg
TL
℃
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2016V01