Datasheet > CS120N08A0

CS120N08A0

更新时间： 2024-11-05 15:19:47

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	561K
描述
TO-263(或D2PAK)

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CS120N08A0 数据手册

Silicon N-Channel Power MOSFET

CS120N08 A0

○

General Description：

V_DSS

CS120N08 A0, the silicon N-channel Enhanced

VDMOSFETs, is obtained by advanced Trench Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency. The package form is TO-263,

which accords with the RoHS standard.

I_D

120

208

（

）

Silicon limited current

P_D(T_C=25℃)

R_DS(ON)Typ

mΩ

Features：

 Fast Switching



Low ON Resistance(Rdson≤7.5mΩ)

 Low Gate Charge (Typical Data:74.4nC)

 Low Reverse transfer capacitances(Typical:253pF)

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

Absolute（Tc= 25℃ unless otherwise specified）：

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

120

Continuous Drain Current

I_D

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

480

I_DM

Gate-to-Source Voltage

V_GS

±20

650.25

208

Single Pulse Avalanche Energy

Power Dissipation

E_AS

P_D

Derating Factor above 25°C

Operating Junction and Storage Temperature Range

Maximum Temperature for Soldering

1.6

W/℃

℃

T_J，T_stg

150，–55 to 150

300

T_L

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10

2017V01

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