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CS120N10A0 PDF预览

CS120N10A0

更新时间: 2024-11-05 15:18:51
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
10页 310K
描述
TO-263(或D2PAK)

CS120N10A0 数据手册

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Silicon N-Channel Power MOSFET  
CS120N10 A0  
R
VDSS  
100  
V
A
General Description  
ID(Silicon limited Current)  
120  
120  
198  
7.5  
CS120N10 A0, the silicon N-channel Enhanced  
VDMOSFETs, is obtained by advanced Trench Technology  
which reduce the conduction loss, improve switching  
performance and enhance the avalanche energy. The transistor  
can be used in various power switching circuit for system  
ID(Package limited Current)  
PD(TC=25)  
RDS(ON)Typ  
A
W
m  
miniaturization and higher efficiency. The package form is TO-263,  
which accords with the RoHS standard.  
Features  
l Fast Switching  
l Low ON Resistance(Rdson9.5m)  
l Low Gate Charge (Typical Data:108nC)  
l Low Reverse transfer capacitances(Typical:311pF)  
l 100% Single Pulse avalanche energy Test  
Applications:  
Power switch circuit of adaptor and charger.  
AbsoluteTJ= 25unless otherwise specified:  
Parameter  
Symbol  
VDSS  
Rating  
Units  
Drain-to-Source Voltage  
100  
V
A
Continuous Drain Current TC = 25°C  
Continuous Drain Current TC = 100°C  
Pulsed Drain Current  
120  
ID  
80  
A
a1  
480  
A
IDM  
Gate-to-Source Voltage  
VGS  
V
±20  
a2  
Single Pulse Avalanche Energy  
Power Dissipation TC = 25°C  
Derating Factor above 25°C  
650  
mJ  
W
EAS  
198  
1.59  
PD  
W/℃  
Operating Junction and Storage Temperature Range  
Maximum Temperature for Soldering  
TJTstg  
15055 to 150  
300  
TL  
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10  
2018V01  

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